Relationship between electron–phonon interaction and low-frequency Raman anisotropy in high-mobility organic semiconductors

2018 ◽  
Vol 20 (28) ◽  
pp. 18912-18918 ◽  
Author(s):  
A. Yu. Sosorev ◽  
D. R. Maslennikov ◽  
I. Yu. Chernyshov ◽  
D. I. Dominskiy ◽  
V. V. Bruevich ◽  
...  

Raman spectroscopy and calculations probe the impact of low-frequency vibrations in anisotropic electron–phonon interaction.

2020 ◽  
Vol 153 (17) ◽  
pp. 174303
Author(s):  
Muzaffar K. Nuraliev ◽  
Olga D. Parashchuk ◽  
Nikita V. Tukachev ◽  
Yuri A. Repeev ◽  
Dmitry R. Maslennikov ◽  
...  

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiawei Zhou ◽  
Hyun D. Shin ◽  
Ke Chen ◽  
Bai Song ◽  
Ryan A. Duncan ◽  
...  

AbstractAs a foundational concept in many-body physics, electron–phonon interaction is essential to understanding and manipulating charge and energy flow in various electronic, photonic, and energy conversion devices. While much progress has been made in uncovering how phonons affect electron dynamics, it remains a challenge to directly observe the impact of electrons on phonon transport, especially at environmental temperatures. Here, we probe the effect of charge carriers on phonon heat transport at room temperature, using a modified transient thermal grating technique. By optically exciting electron-hole pairs in a crystalline silicon membrane, we single out the effect of the phonon–carrier interaction. The enhanced phonon scattering by photoexcited free carriers results in a substantial reduction in thermal conductivity on a nanosecond timescale. Our study provides direct experimental evidence of the elusive role of electron–phonon interaction in phonon heat transport, which is important for understanding heat conduction in doped semiconductors. We also highlight the possibility of using light to dynamically control thermal transport via electron–phonon coupling.


2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  

Author(s):  
Andrey Sosorev ◽  
Dmitry Dominskiy ◽  
Ivan Chernyshov ◽  
Roman Efremov

Chemical versatility of organic semiconductors provides nearly unlimited opportunities for tuning their electronic properties. However, despite decades of research, relationship between molecular structure, molecular packing and charge mobility in these materials remains poorly understood. This reduces the search for high-mobility organic semiconductors to the inefficient trial-and-error approach. For clarifying the abovementioned relationship, investigations of the effect of small changes in the chemical structure on OSs properties are particularly important. In this study, we address computationally the impact of substitution of C-H atom pairs by nitrogen atoms (N-substitution) on molecular properties, molecular packing and charge mobility of crystalline oligoacenes. Besides of decreasing frontier molecular orbital levels, N-substitution dramatically alters molecular electrostatic potential yielding pronounced electron-rich and electron-deficient areas. These changes in the molecular electrostatic potential strengthen face-to-face and edge-to-edge interactions in the corresponding crystals and result in the crossover from the herringbone packing motif to π-stacking. When the electron-rich and electron-deficient areas are large, sharply defined and, probably, have certain symmetry, charge mobility increases up to 3-4 cm2V-1s-1. The results obtained highlight the potential of azaacenes for application in organic electronic devices and are expected to facilitate rational design of organic semiconductors for steady improvement of organic electronics.


2019 ◽  
Vol 13 (3) ◽  
pp. 1970016 ◽  
Author(s):  
Andrey Yu. Sosorev ◽  
Dmitry R. Maslennikov ◽  
Oleg G. Kharlanov ◽  
Ivan Yu. Chernyshov ◽  
Vladimir V. Bruevich ◽  
...  

Author(s):  
Andrey Yu. Sosorev ◽  
Dmitry R. Maslennikov ◽  
Oleg G. Kharlanov ◽  
Ivan Yu. Chernyshov ◽  
Vladimir V. Bruevich ◽  
...  

1998 ◽  
Vol 12 (29n30) ◽  
pp. 1245-1254 ◽  
Author(s):  
S. V. Melkonyan ◽  
F. V. Gasparyan ◽  
V. M. Aroutiouyan ◽  
H. V. Asriyan

The influence of the electron–phonon interaction on formation of the low-frequency noise in semiconductors is theoretically considered. The determining role of scattering mechanisms in formation of the 1/f low frequency noise is shown. The temperature dependence of the Hooge parameter αH is revealed and explained. The lattice character of αH is proven.


2022 ◽  
Vol 130 (1) ◽  
pp. 146
Author(s):  
К.Р. Каримуллин ◽  
А.И. Аржанов ◽  
Н.В. Суровцев ◽  
А.В. Наумов

The temperature-dependent luminescence spectra were analyzed to determine the parameters of the electron-phonon interaction (Huang-Rhys factor and the average phonon energy) for nanocomposites with colloidal CdSe/CdS/ZnS quantum dots (deposited on the surface of a glass substrate and embedded in a thin polymer film of polyisobutylene, and in a frozen colloidal solution in toluene). The measured values of the parameters are analyzed in comparison with model calculations and data obtained using the low-frequency Raman spectroscopy. It is found that in the case of a vitrified colloidal solution of quantum dots in toluene, the matrix effect leads to a noticeable change in the parameters of the electron-phonon interaction.


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