Crystallization kinetics of water on graphite

2018 ◽  
Vol 20 (34) ◽  
pp. 21856-21863 ◽  
Author(s):  
Ryutaro Souda ◽  
Takashi Aizawa
Keyword(s):  
Film Thickness ◽  
Crystallization Kinetics ◽  
Deposition Temperature ◽  
Nucleation And Growth ◽  
Graphite Substrate ◽  
Initial Film ◽  
Kinetics Of

The nucleation and growth of water crystallites on a graphite substrate are discussed in terms of the initial film thickness, deposition temperature, and effects of adspecies.

Study on the Crystallization Kinetics of Polymer Thin Films

2012 ◽  
Vol 466-467 ◽  
pp. 102-105
Author(s):  
Yi Jin Ren
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Film Thickness ◽  
Crystallization Kinetics ◽  
Crystallization Time ◽  
Crystal Thickness ◽  
Polymer Thin Film ◽  
Crystal Growth Mechanism ◽  
The Relationship ◽  
Kinetics Of

The crystallization kinetics of polymer thin film has a great difference from that in the bulk. Generally, the growth rate of the crystal confined in thin film reduces with decreasing film thickness, which is believed that the interaction between chains and substrate is responsible for the decrease of the growth rate. In addition, the ratio of film thickness over crystal thickness is also a key parameter in determining the growth rate. The relationship between the crystal lateral size and the crystallization time also dominates the crystal growth mechanism in polymer thin film.

scholarly journals Crystallization kinetics of thin water films on Pt(111): effects of oxygen and carbon-monoxide adspecies

2019 ◽  
Vol 21 (3) ◽  
pp. 1123-1130 ◽  
Author(s):  
Ryutaro Souda ◽  
Takashi Aizawa
Keyword(s):  
Carbon Monoxide ◽  
Crystallization Kinetics ◽  
Nucleation And Growth ◽  
Growth Processes ◽  
Tof Sims ◽  
Water Films ◽  
Kinetics Of

The nucleation and growth processes of ice crystallites on Pt(111) and how they are influenced by O and CO adspecies are explored using TOF-SIMS, TPD, and RHEED.

Crystallization Kinetics in High-rate Electron Beam Evaporated Poly-Si Thin Film Solar Cells on ZnO:Al

2010 ◽  
Vol 1245 ◽  
Author(s):  
Tobias Sontheimer ◽  
Christiane Becker ◽  
Carola Klimm ◽  
Stefan Gall ◽  
Bernd Rech
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Crystallization Kinetics ◽  
Deposition Temperature ◽  
Electron Backscatter Diffraction ◽  
High Rate ◽  
The Individual ◽  
Backscatter Diffraction ◽  
Kinetics Of

AbstractThe microstructure and crystallization kinetics of electron beam evaporated Si on ZnO:Al coated glass for polycrystalline solar cells was studied by electron backscatter diffraction and optical microscopy at various deposition temperatures. A time dependent analysis of the dynamics of the crystallization allowed for the individual determination of growth and nucleation processes. The nucleation process of Si on ZnO:Al was found to be influenced by a variation of the deposition temperature of the amorphous Si in a critical temperature regime of 200 ˚C to 300 ˚C. The nucleation rate decreased significantly with decreasing deposition temperature, while the activation energy for nucleation increased from 2.9 eV at a deposition temperature of 300 ˚C to 5.1 eV at 200 ˚C, resulting in poly-Si which comprised grains with features sizes of several μm.

In situ observation of the martensitic transformation in (Mg,Y)-PSZ

1986 ◽  
Vol 44 ◽  
pp. 500-501
Author(s):  
R-R. Lee
Keyword(s):  
Martensitic Transformation ◽  
High Strength ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Considerable Potential ◽  
Transmission Electron ◽  
Structural Applications ◽  
Applied Stresses ◽  
Kinetics Of

Partially-stabilized ZrO2 (PSZ) ceramics have considerable potential for advanced structural applications because of their high strength and toughness. These properties derive from small tetragonal ZrO2 (t-ZrO2) precipitates in a cubic (c) ZrO2 matrix, which transform martensitically to monoclinic (m) symmetry under applied stresses. The kinetics of the martensitic transformation is believed to be nucleation controlled and the nucleation is always stress induced. In situ observation of the martensitic transformation using transmission electron microscopy provides considerable information about the nucleation and growth aspects of the transformation.

Synthesis and Crystallization Kinetics of Y 2CaA1 4SiO 12 Garnet-Type Glass-Ceramic

2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  
Keyword(s):  
Crystallization Kinetics ◽  
Glass Ceramic ◽  
Kinetics Of

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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