Crystallization kinetics of amorphous equiatomic NiTi thin films: Effect of film thickness

2008 ◽  
Vol 103 (2) ◽  
pp. 023501 ◽  
Author(s):  
X. Wang ◽  
M. Rein ◽  
J. J. Vlassak
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Crystallization Kinetics ◽  
Kinetics Of

The effect of Fe doping on the crystallization kinetics of Ni-Mn-Sn free-standing alloy thin films

2018 ◽  
Vol 495 ◽  
pp. 19-26 ◽  
Author(s):  
Xiaohua Tian ◽  
Zhenhua Wang ◽  
Jiachen Zhu ◽  
Changlong Tan ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Fe Doping ◽  
Free Standing ◽  
Kinetics Of

The Crystallization Kinetics of Ni-Mn-Ga Magnetic Shape Memory Alloy Thin Films

2019 ◽  
Vol 48 (4) ◽  
pp. 2137-2143
Author(s):  
Jiachen Zhu ◽  
Changlong Tan ◽  
WenBin Zhao ◽  
ZhaiPing Yang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Crystallization Kinetics ◽  
Magnetic Shape Memory ◽  
Magnetic Shape Memory Alloy ◽  
Kinetics Of

Crystallization kinetics of NixTi1−x alloy thin films

2010 ◽  
Vol 405 (3) ◽  
pp. 947-950 ◽  
Author(s):  
Yongchao Lei ◽  
HuiJie Zhao ◽  
Wei Cai ◽  
Xu An ◽  
Laixu Gao
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Kinetics Of

Characterization and crystallization kinetics of sputtered NiSi thin films for blue laser optical recording application

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 144-148 ◽  
Author(s):  
Sin-Liang Ou ◽  
Sheng-Chi Chen ◽  
Yan-Cheng Lin ◽  
Po-Chun Lin ◽  
Chao-Kuang Wen ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Optical Recording ◽  
Blue Laser ◽  
Kinetics Of

Electrical conductivity and crystallization kinetics of amorphous Ag10Te90 and Ag20Te80 thin films

2008 ◽  
Vol 10 (10) ◽  
pp. 1416-1421 ◽  
Author(s):  
A. Abu El-Fadl ◽  
M.M. Hafiz ◽  
M.M. Wakkad ◽  
A.S. Aashour
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Crystallization Kinetics ◽  
Kinetics Of

Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method

2004 ◽  
Vol 19 (10) ◽  
pp. 2938-2946 ◽  
Author(s):  
Chain-Ming Lee ◽  
Yeong-Iuan Lin ◽  
Tsung-Shune Chin
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Isothermal Crystallization ◽  
Optical Transmission ◽  
Isothermal Kinetics ◽  
Initial Surface ◽  
Transmission Method ◽  
Time Resolved ◽  
Stage 1 ◽  
Kinetics Of

Isothermal crystallization kinetics of amorphous Ga–Sb–Te films was studied by means of a time-resolved optical transmission method. Thin films with compositions along the pseudo-binary tie-lines Sb7Te3–GaSb and Sb2Te3–GaSb in the ternary phase diagram were prepared by the co-sputtering method. Crystallization of GaSbTe films reveals a two-stage process: an initial surface nucleation and coarsening (Stage 1) followed by the one-dimensional grain growth (Stage 2). The kinetic exponent (n) value in Stage 1 shows strong dependence on film compositions, while that of Stage 2 is less dependent. The activation energy in Stage 1 increases with increasing GaSb content and reaches the maximum values at compositions close to GaSb, but a decreasing trend was observed in Stage 2. Kinetics parameters between isothermal crystallization of thin films and non-isothermal crystallization of powder samples analyzed by differential scanning colorimetry [J. Mater. Res. 19, 2929 (2004)] are compared. The kinetic parameters in Stage 1 show much correspondence with those of non-isothermal cases in comparable kinetic exponents but with lower activation energies. The discrepancies between nonisothermal and isothermal kinetics are attributed to the sample morphology and the constraint effects.

Thickness Effect On The Crystallization Kinetics Of Electrolessly-Deposited Ni(P) Thin Films

1993 ◽  
Vol 321 ◽  
Author(s):  
L. T. Shi ◽  
E. J. M. O'Sullivan
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Annealing Temperature ◽  
Sample Thickness ◽  
Thickness Effect ◽  
Heating Rates ◽  
Activation Energy Of Crystallization ◽  
Constant Heating ◽  
Kinetics Of ◽  
Seed Layers

ABSTRACTIn order to understand thickness and interfacial effects on the crystallization kinetics of amorphous solids, Ni(P) thin films electrolessly deposited on Cu seed layers were annealed at constant heating rates or at constant temperatures in a DSC to obtain activation energies andAvrami exponents. It was found that the activation energy of crystallization in Ni(P) changes asa function of sample thickness when the sample thickness is less than 1.0 μm. Furthermore, the Avrami exponent was found to change not only as a function of thickness but also as a function of annealing temperature.

Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate

1998 ◽  
Vol 13 (8) ◽  
pp. 2291-2296 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Crystallization Kinetics ◽  
Crystallization Rate ◽  
Diffraction Method ◽  
Sputtering Deposition ◽  
Diffusion Controlled ◽  
Activation Energy Of Crystallization ◽  
Sputter Deposited ◽  
Kinetics Of

The kinetics of in situ crystallization of LaNiO3 thin films in sputtering deposition at temperatures ranging from 250 to 450 °C and isothermal crystallization of room-temperature (RT) sputtered LaNiO3 thin films in annealing at 350–500 °C were investigated by the x-ray diffraction method. The crystallization in both cases basically followed the Johnson–Mehl–Avrami (JMA) relation. However, different crystallization kinetics were observed. The transformation index and activation energy of crystallization in high temperature sputtering were about 1.5 and 33 kJ/mole, respectively, while in the annealing of RT-sputtered films, 1.0 and 63 kJ/mole were found. From the determined transformation index, it is suggested that the crystallization rate in high temperature sputtering was determined by a diffusion-controlled process of lateral growth with a decreasing nucleation rate of crystallites in the adsorption layer. However, the annealed films crystallized by an interface-controlled and one-dimensional growth of existing nuclei.

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