Enhancement of field electron emission in topological insulator Bi2Se3 by Ni doping

2018 ◽  
Vol 20 (27) ◽  
pp. 18429-18435 ◽  
Author(s):  
Kushal Mazumder ◽  
Alfa Sharma ◽  
Yogendra Kumar ◽  
Prashant Bankar ◽  
Mahendra A. More ◽  
...  

Nanostructures of bismuth selenide (Bi2Se3), a 3D topological insulator material, and nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the field emission properties.

2021 ◽  
Author(s):  
Mansi Pathak ◽  
Pallavi Mutadak ◽  
Pratap Mane ◽  
Mahendra A More ◽  
Brahmananda Chakraborty ◽  
...  

Herein, UV/O3 treatment was imposed on the hydrothermally synthesized spinel NiCo2O4 urchin like structure to study its enhancement effect in the field electron emission properties. The as prepared sample was...


2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.


2009 ◽  
pp. NA-NA ◽  
Author(s):  
Guangmin Yang ◽  
Qiang Xu ◽  
Xin Wang ◽  
Hongwei Tian ◽  
Weitao Zheng ◽  
...  

2014 ◽  
Vol 9 (1) ◽  
pp. 55 ◽  
Author(s):  
Loïck-Alexandre Gautier ◽  
Vincent Le Borgne ◽  
Samir Al Moussalami ◽  
My El Khakani

2016 ◽  
Vol 4 (35) ◽  
pp. 8226-8234 ◽  
Author(s):  
Stefania Carapezzi ◽  
Antonio Castaldini ◽  
Filippo Fabbri ◽  
Francesca Rossi ◽  
Marco Negri ◽  
...  

Photo-enhanced field emission from SiC nanowires showed the presence of a saturation region, which is of interest for nanotechnological applications.


2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.


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