Mechanistic insights into the interaction between energetic oxygen ions and nanosized ZnFe2O4: XAS-XMCD investigations

Jitendra Pal Singh; Baljeet Kaur; Aditya Sharma; So Hee Kim; Sanjeev Gautam; Ramesh Chandra Srivastava; Navdeep Goyal; Weol Cheol Lim; H.-J. Lin; J. M. Chen; K. Asokan; D. Kanjilal; Sung Ok Won; Ik-Jae Lee; Keun Hwa Chae

doi:10.1039/c8cp00368h

Mechanistic insights into the interaction between energetic oxygen ions and nanosized ZnFe2O4: XAS-XMCD investigations

Physical Chemistry Chemical Physics ◽

10.1039/c8cp00368h ◽

2018 ◽

Vol 20 (17) ◽

pp. 12084-12096 ◽

Cited By ~ 7

Author(s):

Jitendra Pal Singh ◽

Baljeet Kaur ◽

Aditya Sharma ◽

So Hee Kim ◽

Sanjeev Gautam ◽

...

Keyword(s):

Heavy Ions ◽

Zinc Ferrite ◽

Magnetic Interactions ◽

Oxygen Ions ◽

Swift Heavy Ions ◽

Cation Redistribution

Irradiation of nanosized zinc ferrite with swift heavy ions leads to cation redistribution and changes in magnetic interactions.

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Effect of annealing and swift heavy ions irradiation on vanadium oxide thin films

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2021.1919671 ◽

2021 ◽

pp. 1-8

Author(s):

Kapil Gupta ◽

Sarvesh Kumar ◽

Rahul Singhal

Keyword(s):

Thin Films ◽

Vanadium Oxide ◽

Heavy Ions ◽

Oxide Thin Films ◽

Swift Heavy Ions ◽

Vanadium Oxide Thin Films

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Unravelling the secrets of the resistance of GaN to strongly ionising radiation

Communications Physics ◽

10.1038/s42005-021-00550-2 ◽

2021 ◽

Vol 4 (1) ◽

Author(s):

Miguel C. Sequeira ◽

Jean-Gabriel Mattei ◽

Henrique Vazquez ◽

Flyura Djurabekova ◽

Kai Nordlund ◽

...

Keyword(s):

Heavy Ions ◽

Ionising Radiation ◽

Atomistic Simulations ◽

Extended Defects ◽

Swift Heavy Ions ◽

High Fluences ◽

Radiation Resistant ◽

Simulation And Experiment ◽

Underlying Mechanisms ◽

Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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