Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers

CrystEngComm ◽  
2019 ◽  
Vol 21 (14) ◽  
pp. 2431-2437 ◽  
Author(s):  
Jun Huang ◽  
MuTong Niu ◽  
MaoSong Sun ◽  
XuJun Su ◽  
Ke Xu
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Buffer Layers ◽  
Crystal Quality ◽  
Aln Buffer

To improve the crystal quality and suppress the cracks of HVPE-AlN films, annealed sputtered AlN templates have been utilized.

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1039
Author(s):  
Kazukuni Hara ◽  
Shigeyuki Takaki ◽  
Shinichi Tanishita ◽  
Daisuke Uematsu ◽  
Yuto Hoshino ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers

Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

2008 ◽  
Vol 92 (16) ◽  
pp. 162103 ◽  
Author(s):  
J. Y. Chen ◽  
G. C. Chi ◽  
P. J. Huang ◽  
M. Y. Chen ◽  
S. C. Hung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer

scholarly journals Analysis of GaN-based HEMTS with AlN buffer layers by using Raman spectroscopy

2021 ◽  
pp. 2141010
Author(s):  
Cheng Che Lee ◽  
Hsin Jung Lee ◽  
Hsin Che Lee ◽  
Wei Yu Lee ◽  
Wei Ching Chuang
Keyword(s):  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Drain Current ◽  
Buffer Layers ◽  
Crystal Quality ◽  
Subthreshold Slope ◽  
Gan Hemts ◽  
Aln Buffer

In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current of the HEMT increased from 481 mA/mm to 522 mA/mm at [Formula: see text] V. Subthreshold slope was reduced from 638.3 mV/decade to 240.9 mV/decade and the electron mobility increased from 1109 cm2 V[Formula: see text]s[Formula: see text] to 1781 cm2 V[Formula: see text]s[Formula: see text]. These results showed that using an AlN buffer layer can improve the crystal quality of the GaN epitaxial layer, thus optimize the device performances of the GaN-based HEMTs.

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

1986 ◽  
Vol 48 (5) ◽  
pp. 353-355 ◽  
Author(s):  
H. Amano ◽  
N. Sawaki ◽  
I. Akasaki ◽  
Y. Toyoda
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

2012 ◽  
Vol 10 (3) ◽  
pp. 369-372 ◽  
Author(s):  
Koji Okuno ◽  
Takahide Oshio ◽  
Naoki Shibata ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Structural Evolution ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Aln Buffer

Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 3882-3888 ◽  
Author(s):  
Kenji Uchida ◽  
Ken Nishida ◽  
Masataka Kondo ◽  
Hiroo Munekata
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Buffer Layers
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