The environmental stability of large-size and single-crystalline antimony flakes grown by chemical vapor deposition on SiO2 substrates

2018 ◽  
Vol 54 (69) ◽  
pp. 9671-9674 ◽  
Author(s):  
Qinke Wu ◽  
Young Jae Song
Keyword(s):  
Chemical Vapor Deposition ◽  
Time Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Environmental Stability ◽  
Single Crystalline ◽  
Large Size

The environmental stability of large-sized and single-crystalline antimony flakes was systematically investigated with temperature and time dependence at fixed humidity.

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

2016 ◽  
Vol 37 (8) ◽  
pp. 984-989
Author(s):  
巩 哲 GONG Zhe ◽  
何大伟 HE Da-wei ◽  
王永生 WANG Yong-sheng ◽  
许海腾 XU Hai-teng ◽  
董艳芳 DONG Yan-fang
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controllable Synthesis ◽  
High Quality ◽  
Large Size

Chemical vapor deposition and characterization of undoped and nitrogen‐doped single crystalline 6H‐SiC

1992 ◽  
Vol 72 (11) ◽  
pp. 5437-5442 ◽  
Author(s):  
S. Karmann ◽  
W. Suttrop ◽  
A. Schöner ◽  
M. Schadt ◽  
C. Haberstroh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystalline ◽  
Nitrogen Doped

Temperature and time dependence study of single-walled carbon nanotube growth by catalytic chemical vapor deposition

Carbon ◽  
2010 ◽  
Vol 48 (4) ◽  
pp. 1279-1288 ◽  
Author(s):  
Charlotte T.M. Kwok ◽  
Brandon J. Reizman ◽  
Daniel E. Agnew ◽  
Gurjit S. Sandhu ◽  
J. Weistroffer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Time Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotube ◽  
Catalytic Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

2010 ◽  
Vol 442 ◽  
pp. 195-201
Author(s):  
F. Iqbal ◽  
A. Ali ◽  
A. Mehmood ◽  
M. Yasin ◽  
A. Raja ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystalline ◽  
Type Silicon ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

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