scholarly journals Stable monolayer α-phase of CdTe: strain-dependent properties

2017 ◽  
Vol 5 (46) ◽  
pp. 12249-12255
Author(s):  
E. Unsal ◽  
R. T. Senger ◽  
H. Sahin
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Single Layer ◽  
Biaxial Strain ◽  
Direct Band Gap ◽  
Α Phase ◽  
Direct Band ◽  
Strain Dependent

CdTe is predicted to have a stable single-layer crystal structure in α-PbO phase. It has a direct band gap that can be easily tuned under applied biaxial strain.

scholarly journals Biaxial strain modulated the electronic structure of hydrogenated 2D tetragonal silicene

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42245-42251
Author(s):  
Haoran Tu ◽  
Jing Zhang ◽  
Zexuan Guo ◽  
Chunyan Xu
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Biaxial Strain ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap

Hydrogenation can open the band gap of 2D tetragonal silicene, α-SiH is semiconductors with a direct band gap of 2.436 eV whereas β-SiH is indirect band gap of 2.286 eV. The band gap of α-SiH, β-SiH and γ-SiH can be modulated via biaxial strain.

scholarly journals Theoretical Prediction of the Structural and Electronic Properties of a Single Layer Graphene-like Two-dimensional Janus GaInSTe

2021 ◽  
Vol 37 (2) ◽  
Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
New Type

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.

Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

2018 ◽  
Vol 122 (27) ◽  
pp. 15297-15303 ◽  
Author(s):  
Byung-Hyun Kim ◽  
Mina Park ◽  
Gyubong Kim ◽  
Kersti Hermansson ◽  
Peter Broqvist ◽  
...  
Keyword(s):  
Band Gap ◽  
Biaxial Strain ◽  
Direct Band Gap ◽  
Direct Band

The band gap modulation of monolayer Ti2CO2 by strain

RSC Advances ◽  
2015 ◽  
Vol 5 (39) ◽  
pp. 30438-30444 ◽  
Author(s):  
Xue-fang Yu ◽  
Jian-bo Cheng ◽  
Zhen-bo Liu ◽  
Qing-zhong Li ◽  
Wen-zuo Li ◽  
...  
Keyword(s):  
Band Gap ◽  
Uniaxial Strain ◽  
Biaxial Strain ◽  
Direct Band Gap ◽  
Direct Band ◽  
Band Gap Modulation

Monolayer Ti2CO2: indirect–direct band gap transition under biaxial strain of ∼4% and uniaxial strain of ∼6%.

Ab initio study of strained wurtzite InAs nanowires: engineering an indirect–direct band gap transition through size and uniaxial strain

RSC Advances ◽  
2015 ◽  
Vol 5 (109) ◽  
pp. 89993-90000 ◽  
Author(s):  
Shweta D. Dabhi ◽  
Prafulla K. Jha
Keyword(s):  
Density Functional Theory ◽  
Ab Initio ◽  
Band Gap ◽  
Density Functional ◽  
Ab Initio Study ◽  
Functional Theory ◽  
Direct Band Gap ◽  
Inas Nanowires ◽  
Direct Band ◽  
Strain Dependent

Size and strain dependent electronic properties of wurtzite InAs nanowires are investigated using density functional theory.

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

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