Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

2018 ◽  
Vol 122 (27) ◽  
pp. 15297-15303 ◽  
Author(s):  
Byung-Hyun Kim ◽  
Mina Park ◽  
Gyubong Kim ◽  
Kersti Hermansson ◽  
Peter Broqvist ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42245-42251
Author(s):  
Haoran Tu ◽  
Jing Zhang ◽  
Zexuan Guo ◽  
Chunyan Xu

Hydrogenation can open the band gap of 2D tetragonal silicene, α-SiH is semiconductors with a direct band gap of 2.436 eV whereas β-SiH is indirect band gap of 2.286 eV. The band gap of α-SiH, β-SiH and γ-SiH can be modulated via biaxial strain.


RSC Advances ◽  
2015 ◽  
Vol 5 (39) ◽  
pp. 30438-30444 ◽  
Author(s):  
Xue-fang Yu ◽  
Jian-bo Cheng ◽  
Zhen-bo Liu ◽  
Qing-zhong Li ◽  
Wen-zuo Li ◽  
...  

Monolayer Ti2CO2: indirect–direct band gap transition under biaxial strain of ∼4% and uniaxial strain of ∼6%.


2017 ◽  
Vol 5 (46) ◽  
pp. 12249-12255
Author(s):  
E. Unsal ◽  
R. T. Senger ◽  
H. Sahin

CdTe is predicted to have a stable single-layer crystal structure in α-PbO phase. It has a direct band gap that can be easily tuned under applied biaxial strain.


2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.


2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  

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