Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
2017 ◽
Vol 5
(40)
◽
pp. 10562-10570
◽
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W−1) was fabricated by constructing p–n junction of GaN/Ga2O3 films.