Tracking the maximum power point of hysteretic perovskite solar cells using a predictive algorithm

2017 ◽  
Vol 5 (39) ◽  
pp. 10152-10157 ◽  
Author(s):  
Alexander J. Cimaroli ◽  
Yue Yu ◽  
Changlei Wang ◽  
Weiqiang Liao ◽  
Lei Guan ◽  
...  

The predictive algorithm measures and predicts the steady-state current density for each bias set point, which speeds up the tracking process and measures the true maximum power point, regardless of the degree of hysteresis.

2019 ◽  
Vol 12 (1) ◽  
Author(s):  
Roberto Brenes ◽  
Madeleine Laitz ◽  
Joel Jean ◽  
Dane W. deQuilettes ◽  
Vladimir Bulović

2020 ◽  
Vol 15 (4) ◽  
pp. 487-497 ◽  
Author(s):  
J. Fatima Rasheed ◽  
V. Suresh Babu

This work is the continuation of our previous work entitled "Investigations on optical, material and electrical properties of aSi:H and aSiGe:H in making proposed n+aSi:H/iaSi:H/p+aSiGe:H graded band gap solar cells." In this work, we present an additional bottom layer made of increased germanium content: aSi0.64Ge0.36:H to the previously recommended p+aSi:H/i-aSi:H/n+aSi0.73Ge0.27:H photovoltaic cell to strengthen the absorption spectrum and thereby boosting the attainment of the solar cell. Moreover, the overall active layer thickness is reduced from 430 nm of previous work to 395 nm of proposed work. This work includes the fabrication of samples of epitaxially grown aSiGe:H thin films of varying band gap made with Plasma Enhanced Chemical Vapour Deposition (PECVD) technique succeeded by their characterisation. The establishment of band gap tailoring by varying the germane (GeH4) gas flow rate is thoroughly investigated through optical characterisation. The growth chemistry of PECVD made aSi0.64Ge0.36:H layer has been analysed and the presence of respective radicals has been verified using Fourier Transform Infra Red (FTIR) spectroscopy. In accordance with the measured band gaps, p+ aSi:H/i-aSi:H/n+aSi0.73Ge0.27:H/naSi0.64Ge0.36:H solar cell has been proposed. A comprehensive inquiry on optimisation of the recommended structure has been made by varying the optical band gap and thickness of the bottom most aSi0.64Ge0.36:H layer of the structure. All the cell parameters including open circuit voltage (Voc), short circuit current density (Jsc), maximum power point voltage (Vm), maximum power point current density (Jm), Fill factor (FF) and conversion efficiency (η) has been calculated using SCAPS1D solar simulator. Furthermore, C–V characteristics and Mott-Schottky plot of the proposed structure has been evaluated. The introduction of narrow band gap amorphous silicon germanium (aSi0.64Ge0.36:H) at the bottom has remarkably enhanced Jsc and η to 15.54 mA/cm2 and 15.15% respectively, which is better compared to reported amorphous silicon photovoltaic cells having single junction.


2017 ◽  
Vol 53 (11) ◽  
pp. 1829-1831 ◽  
Author(s):  
Rui Fu ◽  
Yicheng Zhao ◽  
Qi Li ◽  
Wenke Zhou ◽  
Dapeng Yu ◽  
...  

With 3-HP treatment, perovskite solar cells can give a steady and long-term output at maximum power point for more than 50 hours.


Solar RRL ◽  
2019 ◽  
Vol 3 (2) ◽  
pp. 1970024
Author(s):  
Lucija Rakocevic ◽  
Felix Ernst ◽  
Nadine T. Yimga ◽  
Saumye Vashishtha ◽  
Tom Aernouts ◽  
...  

2017 ◽  
Vol 5 (8) ◽  
pp. 3812-3818 ◽  
Author(s):  
Seulki Song ◽  
Maximilian T. Hörantner ◽  
Kyoungwon Choi ◽  
Henry J. Snaith ◽  
Taiho Park

We introduce a pin-hole free CH3NH3PbI3−xClx perovskite layer by using heated airflow during the nucleation stage. We control the nucleation stage which gives a pin-hole free planar perovskite with large grains, resulting in a maximum power point (MPP) efficiency of 14.3% and a high efficiency of 19.0% with reproducibility.


Solar RRL ◽  
2019 ◽  
Vol 3 (2) ◽  
pp. 1800287 ◽  
Author(s):  
Lucija Rakocevic ◽  
Felix Ernst ◽  
Nadine T. Yimga ◽  
Saumye Vashishtha ◽  
Tom Aernouts ◽  
...  

2020 ◽  
Vol 6 (51) ◽  
pp. eabd1580
Author(s):  
Xiaodong Li ◽  
Sheng Fu ◽  
Wenxiao Zhang ◽  
Shanzhe Ke ◽  
Weijie Song ◽  
...  

One big challenge for long-lived inverted perovskite solar cells (PSCs) is that commonly used metal electrodes react with perovskite layer, inducing electrode corrosion and device degradation. Motivated by the idea of metal anticorrosion, here, we propose a chemical anticorrosion strategy to fabricate stable inverted PSCs through introducing a typical organic corrosion inhibitor of benzotriazole (BTA) before Cu electrode deposition. BTA molecules chemically coordinate to the Cu electrode and form an insoluble and polymeric film of [BTA-Cu], suppressing the electrochemical corrosion and reaction between perovskite and the Cu electrode. PSCs with BTA/Cu show excellent air stability, retaining 92.8 ± 1.9% of initial efficiency after aging for 2500 hours. In addition, >90% of initial efficiency is retained after 85°C aging for over 1000 hours. PSCs with BTA/Cu also exhibit good operational stability, and 88.6 ± 2.6% of initial efficiency is retained after continuous maximum power point tracking for 1000 hours.


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