High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates

2017 ◽  
Vol 5 (31) ◽  
pp. 7919-7926 ◽  
Author(s):  
M. Rathi ◽  
P. Dutta ◽  
N. Zheng ◽  
Y. Yao ◽  
D. Khatiwada ◽  
...  

High mobility n-type GaAs – mobilities greater than 1300 cm2 V−1 s−1, highest achieved among semiconductor films grown directly on Ge template on metal foils.

2006 ◽  
Vol 19 (11) ◽  
pp. 1118-1123 ◽  
Author(s):  
T Zilbauer ◽  
P Berberich ◽  
A Lümkemann ◽  
K Numssen ◽  
T Wassner ◽  
...  

2019 ◽  
Vol 52 (4) ◽  
pp. 898-902 ◽  
Author(s):  
Yongkuan Li ◽  
Sicong Sun ◽  
Ying Gao ◽  
Yao Yao ◽  
Eduard Galstyan ◽  
...  

Low texture spreads of single-crystalline-like materials are critical for high performance of low-cost flexible semiconductors and second-generation high-temperature superconductors based on metal foils. For texture improvement, a single-crystalline-like Ag film is epitaxially grown on an ion-beam-assisted deposition TiN substrate using magnetron sputtering. Ultra-low texture spreads are found in the thin Ag film (∼330 nm), with an out-of-plane texture spread (Δω) of ∼1.03° and an in-plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single-crystalline-like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single-crystalline-like Ag films with various thicknesses.


2018 ◽  
Vol 52 (2) ◽  
pp. 215-220 ◽  
Author(s):  
A. V. Stanchik ◽  
V. F. Gremenok ◽  
S. A. Bashkirov ◽  
M. S. Tivanov ◽  
R. L. Juškénas ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (40) ◽  
pp. 21042-21048 ◽  
Author(s):  
Pavel Dutta ◽  
Monika Rathi ◽  
Yao Yao ◽  
Ying Gao ◽  
Goran Majkic ◽  
...  

Roll-to-roll growth of single-crystalline-like germanium thin films with high carrier mobility on low-cost flexible Ni–W metal foils has been demonstrated.


2013 ◽  
Vol 527 ◽  
pp. 9-15 ◽  
Author(s):  
R. Wang ◽  
S.N. Sambandam ◽  
G. Majkic ◽  
E. Galstyan ◽  
V. Selvamanickam

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