Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions

2017 ◽  
Vol 5 (29) ◽  
pp. 7317-7327 ◽  
Author(s):  
Zhen Fan ◽  
Hua Fan ◽  
Lin Yang ◽  
Peilian Li ◽  
Zengxing Lu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Charge Trapping ◽  
Colossal Electroresistance

A unified mechanism for the colossal electroresistance effects in Nb:SrTiO3-based heterojunctions is revealed.

Artificial Synapse Emulated by Charge Trapping-Based Resistive Switching Device

2018 ◽  
Vol 4 (2) ◽  
pp. 1800342 ◽  
Author(s):  
Shi-Rui Zhang ◽  
Li Zhou ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
Jia-Qin Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Charge Trapping ◽  
Switching Device ◽  
Artificial Synapse

scholarly journals Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride

2020 ◽  
Vol 10 (10) ◽  
pp. 3506
Author(s):  
Nayan C. Das ◽  
Se-I Oh ◽  
Jarnardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Charge Trapping ◽  
High Resistance State ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Silicon Oxynitride ◽  
Set Switching ◽  
Resistance State ◽  
Switching Characteristics

Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having RHRS/RIRS > 10, RIRS/RLRS > 5, RHRS/RLRS > 103, and retention over 1.8 × 104 s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiOxNy layer and filamentary switching mode at the interface between the SiOxNy and Ni layers.

scholarly journals Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032166 ◽  
Author(s):  
Xi Zou ◽  
Hock Guan Ong ◽  
Lu You ◽  
Weigang Chen ◽  
Hui Ding ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Charge Trapping

Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3

2013 ◽  
Vol 5 (4) ◽  
pp. 1213-1217 ◽  
Author(s):  
Yimin Cui ◽  
Haiyang Peng ◽  
Shuxiang Wu ◽  
Rongming Wang ◽  
Tom Wu
Keyword(s):  
Rare Earth ◽  
Resistive Switching ◽  
Charge Trapping ◽  
Rare Earth Manganite

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  
Keyword(s):  
Comparative Study ◽  
Charge Trapping ◽  
Pulsed Current ◽  
Trapping Effect ◽  
Current Voltage ◽  
P Type

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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