Effect of laser energy on the crystal structure and UV response characteristics of mixed-phase MgZnO thin films deposited by PLD and the fabrication of high signal/noise ratio solar-blind UV detector based on mix-phase MgZnO at lower voltage

2017 ◽  
Vol 5 (44) ◽  
pp. 11472-11480 ◽  
Author(s):  
S. Han ◽  
X. H. Ji ◽  
Q. L. An ◽  
Y. M. Lu ◽  
P. J. Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Uv Light ◽  
Mixed Phase ◽  
High Signal ◽  
Uv Detector ◽  
Uv Detectors ◽  
Response Characteristics ◽  
Solar Blind ◽  
Uv Response

UV detectors based on mixed-phase MgZnO thin films, synthesized at 24 J cm−2 and 26 J cm−2, could detect faint deep UV light under strong background noise.

Pyrochlore oxide Y2Hf2O7 thin films for solar-blind UV detectors

2020 ◽  
Vol 105 ◽  
pp. 109837
Author(s):  
Xingzhao Liu ◽  
Peng Leng ◽  
Bowen Zhao ◽  
Yixuan Ren ◽  
Qing Liu
Keyword(s):  
Thin Films ◽  
Uv Detectors ◽  
Solar Blind ◽  
Pyrochlore Oxide

High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (38) ◽  
pp. 11834-11844 ◽  
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Sensitive Material ◽  
Uv Detectors ◽  
Highly Sensitive ◽  
Solar Blind

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Ultraviolet Detector Based on TiO2 Thin Film

2013 ◽  
Vol 704 ◽  
pp. 195-199
Author(s):  
Qi Qi Ma ◽  
Biao He ◽  
Xiao Kun Huang ◽  
Yan Lan He ◽  
Xiao Yan Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Uv Light ◽  
Low Cost ◽  
Sol Gel ◽  
Metal Structure ◽  
Transfer Characteristic ◽  
Superior Performance ◽  
Electrical Measurements ◽  
Uv Detector ◽  
Uv Detectors

In this paper, TiO2 thin film with MSM (metal-semiconductor-metal) structure was used to fabricate ultraviolet (UV) detector. The film was fabricated via sol-gel method on silicon wafer with 300nm oxide layer and annealed at four different temperatures (400oC, 500oC, 600oC and 800oC). The quality of the thin films was characterized by means of X-ray diffraction and scanning electron microscope. Then a pair of symmetric Ag electrodes were deposited by thermal evaporation through a shade mask of interdigital structure. The photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied with or without explored to 254nm UV light. The electrical measurements of the device show a big increase of current when explored the device to 254nm UV light, and the rise time of the device is very quick, but the fall time is relatively long. The detector with simple fabrication process, low cost, and superior performance would provide a potential application in UV detectors.

Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors

2000 ◽  
Vol 639 ◽  
Author(s):  
Tom N. Oder ◽  
Jing Li ◽  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Quaternary Alloy ◽  
Uv Detector ◽  
Uv Detectors ◽  
Time Resolved ◽  
Ultraviolet Detectors ◽  
Solar Blind ◽  
Deep Uv ◽  
Uv Range

ABSTRACTUltraviolet (UV) photoconductive detectors based on InxAlyGa1−x−yN quaternary alloy lattice-matched to GaN have been fabricated and characterized. The detectors consisted of about 0.1 μm thick InxAlyGa1−x−yN quaternary alloy of different In (x) and Al (y) compositions grown by metalorganic chemical vapor deposition (MOCVD). The films were characterized by different techniques including x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), Hall-effect and time-resolved photoluminescence measurements. The characteristics of these UV detectors including the cut-off wavelength, photoresponsivity and device speed have been measured. The cut-off wavelength of the InxAlyGa1−x−yN detectors was found to vary to the deep UV range with varying In and Al compositions. The most important and intriguing result is that the responsivity of the InxAlyGa1−xyN quaternary alloy exceeded that of AlGaN alloy of comparable cut-off wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detector applications in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN.

scholarly journals A Solar-Blind Ultraviolet Photodetector With Graphene/MgZnO/GaN Vertical Structure

2021 ◽  
Vol 8 ◽  
Author(s):  
Zhao Wang ◽  
Jun Lin ◽  
Xuan Wei ◽  
Wei Zheng ◽  
Qichang Hu
Keyword(s):  
Vertical Structure ◽  
Uv Light ◽  
High Mobility ◽  
Light Response ◽  
Window Layer ◽  
Test Results ◽  
Ultraviolet Photodetector ◽  
Uv Detector ◽  
Detection Ability ◽  
Solar Blind

Graphene (Gr) has high transmittance to ultraviolet (UV) light and high mobility, which can effectively collect and transfer carriers. In this work, MgZnO (MZO) films were grown on the surface of the p-GaN by magnetron sputtering. A heterojunction solar-blind UV detector with Gr/MZO/GaN structure was constructed by introducing Gr as the window layer film. The test results show that the device has excellent detection ability for solar-blind UV light. The light response cut-off edge of the device is 263 nm, under the illumination of 255 nm and the bias voltage of −5 V, the responsivity is 14.6 mA/W, the rise time is 0.79 s, the decay time is 0.2 s, and the external quantum efficiency is 71.1%. The importance of this work lies in providing a reference for the application of Gr-based photodetectors.

scholarly journals Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Dongdong D. Meng ◽  
Xueqiang Q. Ji ◽  
Dafang F. Wang ◽  
Zhengwei W. Chen
Keyword(s):  
Uv Light ◽  
Fast Response ◽  
Light Illumination ◽  
Uv Detector ◽  
Back Gate ◽  
Uv Photodetectors ◽  
Mos Structure ◽  
Solar Blind ◽  
Decay Times ◽  
Excellent Stability

Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.

scholarly journals Great Enhancement Effect of 20–40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector

ACS Omega ◽  
2021 ◽  
Author(s):  
Shun Han ◽  
Hao Xia ◽  
YouMing Lu ◽  
Sirong Hu ◽  
DaoHua Zhang ◽  
...  
Keyword(s):  
Mixed Phase ◽  
Enhancement Effect ◽  
Ag Nps ◽  
Solar Blind ◽  
Uv Response
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