A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

2017 ◽  
Vol 5 (34) ◽  
pp. 8688-8693 ◽  
Author(s):  
Zhenping Wu ◽  
Lei Jiao ◽  
Xiaolong Wang ◽  
Daoyou Guo ◽  
Wenhao Li ◽  
...  

An epitaxial β-Ga2O3/Ga:ZnO heterojunction based self-powered DUV photodetector with an excellent wavelength selectivity and a high DUV/visible rejection ratio.

Nano Research ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 183-189 ◽  
Author(s):  
Ranran Zhuo ◽  
Longhui Zeng ◽  
Huiyu Yuan ◽  
Di Wu ◽  
Yuange Wang ◽  
...  

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.


Small ◽  
2016 ◽  
Vol 12 (42) ◽  
pp. 5809-5816 ◽  
Author(s):  
Hongyu Chen ◽  
Pingping Yu ◽  
Zhenzhong Zhang ◽  
Feng Teng ◽  
Lingxia Zheng ◽  
...  

2017 ◽  
Vol 41 (12) ◽  
pp. 4901-4907 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Lu Yang ◽  
Cong Ye ◽  
Mengni Xue ◽  
...  

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.


2016 ◽  
Vol 8 (9) ◽  
pp. 6137-6143 ◽  
Author(s):  
Yanwei Shen ◽  
Xiaoqin Yan ◽  
Haonan Si ◽  
Pei Lin ◽  
Yichong Liu ◽  
...  

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