Photoluminescence of pure silicon quantum dots embedded in an amorphous silica wire array

2017 ◽  
Vol 5 (27) ◽  
pp. 6713-6717 ◽  
Author(s):  
Shunkai Lu ◽  
Bin Wu ◽  
Yuyang Sun ◽  
Yafei Cheng ◽  
Fan Liao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silica ◽  
Thermal Evaporation ◽  
Wire Array ◽  
Silicon Quantum Dots ◽  
Pure Silicon ◽  
Si Quantum Dots

Si quantum dots embedded in an amorphous silica wire array were first synthesized using thermal evaporation.

Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

2019 ◽  
Vol 21 (45) ◽  
pp. 25467-25473 ◽  
Author(s):  
A. F. Zatsepin ◽  
Yu. A. Kuznetsova ◽  
C. H. Wong
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Amorphous Silica ◽  
Ion Beam ◽  
Silica Matrix ◽  
Radiation Defects ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

Precise size separation of water-soluble red-to-near-infrared-luminescent silicon quantum dots by gel electrophoresis

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 9266-9271
Author(s):  
Minoru Fujii ◽  
Akiko Minami ◽  
Hiroshi Sugimoto
Keyword(s):  
Quantum Dots ◽  
Standard Method ◽  
Gel Electrophoresis ◽  
Near Infrared ◽  
Water Soluble ◽  
Silicon Quantum Dots ◽  
Size Separation ◽  
First Time ◽  
Si Quantum Dots

Gel electrophoresis, which is a standard method for separation and analysis of macromolecules such as DNA, RNA and proteins, is applied for the first time to silicon (Si) quantum dots (QDs) for size separation.

Assembling silicon quantum dots into wires, networks and rods via metal ion bridges

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7597-7604 ◽  
Author(s):  
Yuki Ohata ◽  
Hiroshi Sugimoto ◽  
Minoru Fujii
Keyword(s):  
Quantum Dots ◽  
Electrical Properties ◽  
Metal Ions ◽  
Metal Ion ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

Wires, networks and rods of Si quantum dots (QDs) are produced by bridging Si QDs with metal ions and the electrical properties are studied.

DETERMINE THE SIZE AND OXIDIZATION OF SILICON QUANTUM DOTS PREPARED BY THERMAL EVAPORATION METHOD

2003 ◽  
Vol 02 (04n05) ◽  
pp. 357-362
Author(s):  
T. Y. CHIEN ◽  
C. T. CHIA ◽  
T. C. LIN ◽  
S. C. LEE
Keyword(s):  
Quantum Dots ◽  
Raman Spectra ◽  
Thermal Evaporation ◽  
Life Time ◽  
Gas Pressure ◽  
Evaporation Chamber ◽  
Thermal Evaporation Method ◽  
Ar Gas ◽  
Average Size ◽  
Si Quantum Dots

Raman spectrum has been used to analyze the size of Silicon (Si) quantum dots (QDs) prepared by thermal evaporation. Si QDs were grown in thermal evaporation chamber with Ar gas presented. We determined the average size of the Si QDs by analyzing the optical phonon of Si QDs in Raman spectra. We found that the higher the Ar gas pressure in the chamber, the larger the average size of Si QDs grown by thermal evaporation. We found the Si dot size reaches a maximum, about 7.5 nm in diameter, when Ar gas pressure is about 2–3 torr. The oxidization of Si QDs is also observed by Raman spectra. The life time of oxidized process was about 46 days.

Insight into the effects of surface oxidation and carbonization on the electronic properties of silicon quantum dots and silicon slabs: a density functional study

RSC Advances ◽  
2014 ◽  
Vol 4 (105) ◽  
pp. 60948-60952 ◽  
Author(s):  
Yuheng Zeng ◽  
Liang Chen ◽  
Guoqiang Liu ◽  
Hua Xu ◽  
Weijie Song
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Density Functional ◽  
Surface Oxidation ◽  
Functional Study ◽  
Silicon Quantum Dots ◽  
Carrier Recombination ◽  
Oxygen Oxidation ◽  
Si Quantum Dots ◽  
Insight Into

In this work, we investigated the effects of surface backbond-oxygen oxidation and surface substitute-carbon carbonization on carrier recombination and transportation of 10-, 12- and 14 Å Si quantum dots (QDs).

Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice

2007 ◽  
Vol 46 (No. 35) ◽  
pp. L833-L835 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shigeki Tomita ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Quantum Dots ◽  
Silicon Quantum Dots ◽  
Amorphous Sic ◽  
Si Quantum Dots

scholarly journals Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Eun-Chel Cho ◽  
Martin A. Green ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
Young-Hyun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Quantum Confinement ◽  
Collection Efficiency ◽  
Film Material ◽  
Defect States ◽  
Silicon Quantum Dots ◽  
Rich Material ◽  
Silicon Based ◽  
Si Quantum Dots

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

Communication: Photoinduced Carbon Dioxide Binding with Surface-Functionalized Silicon Quantum Dots

2018 ◽  
Author(s):  
Oscar A. Douglas-Gallardo ◽  
Cristián Gabriel Sánchez ◽  
Esteban Vöhringer-Martinez
Keyword(s):  
Carbon Dioxide ◽  
Quantum Dots ◽  
Atmospheric Carbon Dioxide ◽  
Density Functional ◽  
Tight Binding ◽  
Carbon Dioxide Concentration ◽  
Research Area ◽  
Silicon Quantum Dots ◽  
Dependent Model ◽  
Photoinduced Charge

<div> <div> <div> <p>Nowadays, the search of efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf -SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). Chemical and electronic properties of the proposed SiQDs have been studied with Density Functional Theory (DFT) and Density Functional Tight-Binding (DFTB) approach along with a Time-Dependent model based on the DFTB (TD-DFTB) framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf -SiQDs for photochemically activated carbon dioxide fixation. </p> </div> </div> </div>

Size-Dependent Photothermal Performance of Silicon Quantum Dots

2021 ◽  
Vol 125 (6) ◽  
pp. 3421-3431
Author(s):  
İrem Nur Gamze Özbilgin ◽  
Batu Ghosh ◽  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dots ◽  
Silicon Quantum Dots ◽  
Size Dependent
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