An embedded-PVA@Ag nanofiber network for ultra-smooth, high performance transparent conducting electrodes

2017 ◽  
Vol 5 (17) ◽  
pp. 4198-4205 ◽  
Author(s):  
Soram Bobby Singh ◽  
Yibin Hu ◽  
Tolendra Kshetri ◽  
Nam Hoon Kim ◽  
Joong Hee Lee

Flexible transparent conducting electrodes (TCEs) in replacement of brittle indium tin oxide (ITO) films are of ultimate importance in the production of flexible and stretchable displays, lighting devices, and solar panels with the ability to resist harsh weather conditions.

2011 ◽  
Vol 176 (14) ◽  
pp. 1128-1131 ◽  
Author(s):  
Myun-sung Hwang ◽  
Bong-yong Jeong ◽  
Jooho Moon ◽  
Sang-Ki Chun ◽  
Jihoon Kim

2009 ◽  
Vol 12 (9) ◽  
pp. H322 ◽  
Author(s):  
Hwan Hee Jeong ◽  
Sang Youl Lee ◽  
June-O Song ◽  
Kwang Ki Choi ◽  
Seok-Hun Lee ◽  
...  

Author(s):  
Tianlei Ma ◽  
Mohamed Missous ◽  
Gergo Pinter ◽  
Xiang Li Zhong ◽  
Ben Spencer ◽  
...  

Investigation of novel and high-performance transparent conducting electrodes (TCEs) is required to substitute currently widely used tin-doped indium oxide (ITO) due to the low abundance of indium and constantly increasing...


Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.


Author(s):  
R. Hippler ◽  
H. Steffen ◽  
M. Quaas ◽  
T. Röwf ◽  
T.M. Tun ◽  
...  

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