Highly efficient saturated visible up-conversion photoluminescent Y2O3:Er3+ microspheres pumped with a 1.55 μm laser diode

2017 ◽  
Vol 5 (16) ◽  
pp. 3903-3907 ◽  
Author(s):  
Jinbo Zhao ◽  
Lili Wu ◽  
Chuanjiang Zhang ◽  
Bin Zeng ◽  
Yingnan Lv ◽  
...  

Highly efficient saturation up-conversion bright visible luminescence was obtained using 1.55 μm laser diode excitation power as low as ∼0.03 W cm−2 in lab-synthesized Y2O3:Er3+ microspheres.

2009 ◽  
Vol 36 (6) ◽  
pp. 1337-1340
Author(s):  
杨晓冬 Yang Xiaodong ◽  
薄勇 Bo Yong ◽  
彭钦军 Peng Qinjun ◽  
许祖彦 Xu Zuyan ◽  
邵建新 Shao jianxin ◽  
...  
Keyword(s):  

1990 ◽  
Vol 26 (8) ◽  
pp. 498 ◽  
Author(s):  
M. Shimizu ◽  
M. Horiguchi ◽  
M. Yamada ◽  
M. Okayasu ◽  
T. Takeshita ◽  
...  

1991 ◽  
Vol 9 (2) ◽  
pp. 291-296 ◽  
Author(s):  
M. Shimizu ◽  
M. Horiguchi ◽  
M. Yamada ◽  
I. Nishi ◽  
J. Noda ◽  
...  

1996 ◽  
Vol 3 (6) ◽  
pp. A484-A486 ◽  
Author(s):  
Makoto Takahashi ◽  
Masahiro Aoki ◽  
Hiroshi Sato ◽  
Tsukuru Ohtoshi ◽  
Shinji Tsuji

2002 ◽  
Vol 41 (Part 2, No. 3A) ◽  
pp. L252-L255 ◽  
Author(s):  
Kenju Otsuka ◽  
Jing-Yuan Ko ◽  
Takeki Fukazawa

Science ◽  
2016 ◽  
Vol 352 (6291) ◽  
pp. 1301-1304 ◽  
Author(s):  
N. W. Rosemann ◽  
J. P. Eussner ◽  
A. Beyer ◽  
S. W. Koch ◽  
K. Volz ◽  
...  

2016 ◽  
Vol 52 (31) ◽  
pp. 5354-5370 ◽  
Author(s):  
Nobuhiro Yanai ◽  
Nobuo Kimizuka

This Feature Article reviews an emerging field of triplet energy migration-based photon upconversion (TEM-UC) that allows highly efficient photon upconversion at low excitation power.


1995 ◽  
Vol 417 ◽  
Author(s):  
S. Miyazaki ◽  
A. Mouraguchi ◽  
M. Shinohara

AbstractPolysiloxene-based films have been prepared by plasma enhanced CVD in a Si2H6+O2 gas mixture at a substrate temperature of −110°C and annealed at temperatures from 700°C to 1000°C. It is found that the film annealed at 1000°C is composed of 1∼5nm Si crystallites embedded in SiO2 and exhibits stable, intense visible-luminescence at room temperature under 488nm excitation. The temperature and excitation power dependences of the steady-state and timeresolved luminescence of the annealed films suggest the radiative recombination through localized states in the Si/SiO2 interface region.


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