Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films

1995 ◽  
Vol 417 ◽  
Author(s):  
S. Miyazaki ◽  
A. Mouraguchi ◽  
M. Shinohara
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Substrate Temperature ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Excitation Power ◽  
Localized States ◽  
Gas Mixture ◽  
Plasma Enhanced Cvd ◽  
Visible Luminescence

AbstractPolysiloxene-based films have been prepared by plasma enhanced CVD in a Si2H6+O2 gas mixture at a substrate temperature of −110°C and annealed at temperatures from 700°C to 1000°C. It is found that the film annealed at 1000°C is composed of 1∼5nm Si crystallites embedded in SiO2 and exhibits stable, intense visible-luminescence at room temperature under 488nm excitation. The temperature and excitation power dependences of the steady-state and timeresolved luminescence of the annealed films suggest the radiative recombination through localized states in the Si/SiO2 interface region.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

2007 ◽  
Vol 124-126 ◽  
pp. 1597-1600
Author(s):  
Hyoun Woo Kim ◽  
Sun Keun Hwang ◽  
Won Seung Cho ◽  
Tae Gyung Ko ◽  
Seung Yong Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Light Emission ◽  
Xrd Analysis ◽  
Oxygen Mixture ◽  
Photoluminescence Spectra ◽  
Sem Images ◽  
Room Temperature Photoluminescence ◽  
Visible Light Emission

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

Correlation of the Stress-Temperature History with Microstructure in A1-0.5Cu and A1-0.15Pd Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
D. D. Knorr ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Temperature History ◽  
Thermal Expansion Mismatch ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Precipitate Structure

AbstractBlanket films (1 μm thick) of both A1-0.5Cu and A1-0.15Pd were deposited at room temperature, 150°C, and 300°C. Stress in the as-deposited wafers increased with substrate temperature, as expected from the thermal expansion mismatch on cooling. All conditions were tiicrmally cycled to 450°C three times while continuously monitoring stress. The shapes of the curves were different for the two alloys because precipitates dissolve and reprecipitate in AlCu, but are present over the entire temperature range in AlPd. Lesser differences were evident comparing the stress-temperature behavior for the various substrate temperatures within a single alloy. The precipitate structure also influences the grain growth during thermal cycling, where substantially larger median grain sizes are found in AlCu compared to AlPd.

The Effect of Substrate Temperature on the Room Temperature Ferromagnetism of Co-Doped ZnO Thin Films

2008 ◽  
Vol 37 (5) ◽  
pp. 831-834 ◽  
Author(s):  
Wang Zhuliang ◽  
Li Xiaoli ◽  
Jiang Fengxian ◽  
Tian Baoqiang ◽  
Lü Baohua ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

2010 ◽  
Vol 25 (10) ◽  
pp. 1936-1942 ◽  
Author(s):  
Deuk Ho Yeon ◽  
Bhaskar Chandra Mohanty ◽  
Yeon Hwa Jo ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Surface Coverage ◽  
Hole Concentration ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Average Size

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

scholarly journals Photo-Electrical Properties Of Semiconducting Se-Sb-In Thin Films

2021 ◽  
Author(s):  
Maninder. Kamboj
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Bias Voltage ◽  
Continuous Distribution ◽  
Interaction Model ◽  
Theoretical Models ◽  
Exposure Period ◽  
Localized States ◽  
Transient Photoconductivity ◽  
Increase With Increase

The objective of this research project was to analyze the photo-degradation of the photocurrent of the electron beam evaporated amorphous semiconducting Se90-xSb10Inx (0 ≤ x ≤ 15) thin films (α-Se90-xSb10Inx). The photo-induced effects in amorphous semiconducting Se90-xS10Inx (0 ≤ x ≤ 15) thin films were studied using two approaches: steady state and transient photoconductivity. The degradation of photocurrent has been explained on the basis of theoretical models. The steady state analysis has been performed by plotting the photocurrent (Iph) versus light intensity (F) and this variation follows a power law Iph=Fy. The value of exponent γ lies between 0.5 and 1.0, which indicates there exists a continuous distribution of localized states in the mobility gap of Se90-xSb10Inx (0 ≤ x ≤ 15) thin films. For transient photoconductivity, when the samples were illuminated with light, the photocurrent quickly reaches the maximum value and thereafter, it starts decreasing with the exposure period and becomes stable after approximately 15 minutes of exposure. This kind of phenomenon is termed as photodegradation of photocurrent. The results have been explained on the basis of charged defect model and the inter-cluster interaction model. High photocurrents are found for α-Se75Sb10In15 system, which is even higher than the parent system Se₉₀Sb₁₀. The influence of bias voltage on the dark current and photocurrent of the Se90-xSb10Inx (0 ≤ x ≤ 15) thin films is also investigated. Both the dark and photocurrent increase with increase in the bias voltage. The compositional dependence of dark conductivity, photoconductivity and the photosensitivity shows a minimum at 5 atomic percentage of Indium (In) concentration, which has been explained based on chemically ordered network model and the topological model.

scholarly journals Photo-Electrical Properties Of Semiconducting Se-Sb-In Thin Films

2021 ◽  
Author(s):  
Maninder. Kamboj
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Bias Voltage ◽  
Continuous Distribution ◽  
Interaction Model ◽  
Theoretical Models ◽  
Exposure Period ◽  
Localized States ◽  
Transient Photoconductivity ◽  
Increase With Increase

The objective of this research project was to analyze the photo-degradation of the photocurrent of the electron beam evaporated amorphous semiconducting Se90-xSb10Inx (0 ≤ x ≤ 15) thin films (α-Se90-xSb10Inx). The photo-induced effects in amorphous semiconducting Se90-xS10Inx (0 ≤ x ≤ 15) thin films were studied using two approaches: steady state and transient photoconductivity. The degradation of photocurrent has been explained on the basis of theoretical models. The steady state analysis has been performed by plotting the photocurrent (Iph) versus light intensity (F) and this variation follows a power law Iph=Fy. The value of exponent γ lies between 0.5 and 1.0, which indicates there exists a continuous distribution of localized states in the mobility gap of Se90-xSb10Inx (0 ≤ x ≤ 15) thin films. For transient photoconductivity, when the samples were illuminated with light, the photocurrent quickly reaches the maximum value and thereafter, it starts decreasing with the exposure period and becomes stable after approximately 15 minutes of exposure. This kind of phenomenon is termed as photodegradation of photocurrent. The results have been explained on the basis of charged defect model and the inter-cluster interaction model. High photocurrents are found for α-Se75Sb10In15 system, which is even higher than the parent system Se₉₀Sb₁₀. The influence of bias voltage on the dark current and photocurrent of the Se90-xSb10Inx (0 ≤ x ≤ 15) thin films is also investigated. Both the dark and photocurrent increase with increase in the bias voltage. The compositional dependence of dark conductivity, photoconductivity and the photosensitivity shows a minimum at 5 atomic percentage of Indium (In) concentration, which has been explained based on chemically ordered network model and the topological model.

Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

2005 ◽  
Vol 475-479 ◽  
pp. 1209-1212 ◽  
Author(s):  
Akihiko Ito ◽  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Room Temperature ◽  
High Vacuum ◽  
Amorphous Structure ◽  
Preparation Condition ◽  
Electrically Conductive

SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and PO2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and PO2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

Sign in / Sign up

Export Citation Format

Share Document