Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties

2017 ◽  
Vol 5 (15) ◽  
pp. 3788-3795 ◽  
Author(s):  
Kai Cheng ◽  
Yu Guo ◽  
Nannan Han ◽  
Yan Su ◽  
Junfeng Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group Iv ◽  
Band Alignment ◽  
Band Alignments

Band alignments of lateral heterostructures of group-IV monochalcogenides.

Tuning the electronic properties and band alignment of GeSe/phosphorene lateral heterostructure

2021 ◽  
Vol 195 ◽  
pp. 110501
Author(s):  
Jingjing Ye ◽  
Yang Yang ◽  
Dewei Rao ◽  
Yandong Guo ◽  
Xiaohong Yan
Keyword(s):  
Electronic Properties ◽  
Band Alignment ◽  
Lateral Heterostructure

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

scholarly journals Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions

RSC Advances ◽  
2018 ◽  
Vol 8 (52) ◽  
pp. 29862-29870 ◽  
Author(s):  
Yonghong Hu ◽  
Caixia Mao ◽  
Zhong Yan ◽  
Ting Shu ◽  
Hao Ni ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group Iv ◽  
Biaxial Strain ◽  
Group Iva

We studied the effect of stacking method and biaxial strain on the electronic properties of the few-layer group-IV monochalcogenides heterojunction.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

2021 ◽  
Author(s):  
Dahua Ren ◽  
Qiang Li ◽  
Kai Qian ◽  
Xingyi Tan
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Visible Light ◽  
Electronic Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Alignment ◽  
Promising Candidate ◽  
Functional Theory ◽  
External Strain

Abstract Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we have studied the structural, electronic and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with suitable indirect band gaps of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced by comparison with the GaS monolayer and SnS2 monolayer in the visible light. Our results suggest that GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in visible light.

Tunable electronic properties of the novel g-ZnO/1T-TiS2 vdW heterostructure by electric field and strain: crossovers in bandgap and band alignment types

2020 ◽  
Vol 22 (14) ◽  
pp. 7412-7420 ◽  
Author(s):  
Kourosh Rahimi
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Band Alignment ◽  
The Novel ◽  
Biaxial Strain ◽  
Tunable Bandgap ◽  
Vdw Heterostructure

The promising g-ZnO/1T-TiS2 vdW heterostructure with tunable bandgap and band alignment type under biaxial strain and electric field was proposed.

scholarly journals Structural, vibrational, and electronic properties of single-layer hexagonal crystals of group IV and V elements

2018 ◽  
Vol 98 (4) ◽  
Author(s):  
Burak Özdamar ◽  
Gözde Özbal ◽  
M. Neşet Çınar ◽  
Koray Sevim ◽  
Gizem Kurt ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Single Layer ◽  
Group Iv ◽  
Hexagonal Crystals
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