N-Unsubstituted thienoisoindigos: preparation, molecular packing and ambipolar organic field-effect transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2509-2512 ◽  
Author(s):  
Dongho Yoo ◽  
Tsukasa Hasegawa ◽  
Minoru Ashizawa ◽  
Tadashi Kawamoto ◽  
Hiroyasu Masunaga ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Packing ◽  
Organic Thin Film Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film

N-Unsubstituted thienoisoindigo and the diphenyl derivative are prepared and these molecules exhibit ambipolar performance in organic thin film transistors.

Directly probing the charge transport in initial molecular layers of organic polycrystalline field effect transistors

2021 ◽  
Author(s):  
Zheng Zhou ◽  
Jiawei Wang ◽  
Jiezhi Chen ◽  
Chao Jiang ◽  
Ling Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Electrode Contact ◽  
Molecular Layers

We report the charge transport in pentacene polycrystalline organic thin film transistors (OTFTs) with different active layer thicknesses, ranging from a sub-monolayer, bilayer, to tens of nanometers by employing a novel electrode-contact architecture.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

scholarly journals Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Binder ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

scholarly journals Optimizing Pentacene Growth in Low-Voltage Organic Thin-Film Transistors Prepared by Dry Fabrication Techniques

2012 ◽  
Vol 1435 ◽  
Author(s):  
S. Gupta ◽  
K. C. Chinnam ◽  
M. Zelzer ◽  
R. Ulijn ◽  
H. Gleskova
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Evaporation Rate ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Transistor Channel ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 Å/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ∼100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.

Spin-on Polymer Gate Dielectric for High Performance Organic Thin Film Transistors

1999 ◽  
Vol 558 ◽  
Author(s):  
C.D. Sheraw ◽  
D.J. Gundlach ◽  
T.N. Jackson
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Parylene C ◽  
Polymeric Dielectrics

ABSTRACTWe have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

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