Novel p-type thermoelectric materials Cu3MCh4 (M = V, Nb, Ta; Ch = Se, Te): high band-degeneracy

2017 ◽  
Vol 5 (20) ◽  
pp. 9785-9792 ◽  
Author(s):  
A. J. Hong ◽  
C. L. Yuan ◽  
G. Gu ◽  
J.-M. Liu
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
P Type ◽  
High Band

The good thermoelectric performance of some half-Heusler (HH) alloys has been stimulating substantial efforts in searching for more materials with similar crystal structures but better properties.

High Band Degeneracy Contributes to High Thermoelectric Performance in p-Type Half-Heusler Compounds

2014 ◽  
Vol 4 (18) ◽  
pp. 1400600 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yanzhong Pei ◽  
Hanhui Xie ◽  
Heng Wang ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
Heusler Compounds ◽  
P Type ◽  
High Band

scholarly journals Understanding the asymmetrical thermoelectric performance for discovering promising thermoelectric materials

2019 ◽  
Vol 5 (6) ◽  
pp. eaav5813 ◽  
Author(s):  
Hangtian Zhu ◽  
Jun Mao ◽  
Zhenzhen Feng ◽  
Jifeng Sun ◽  
Qing Zhu ◽  
...  
Keyword(s):  
Power Generation ◽  
High Temperature ◽  
Thermoelectric Power ◽  
Conversion Efficiency ◽  
Thermoelectric Materials ◽  
The Other ◽  
Thermoelectric Performance ◽  
Cold Side ◽  
P Type ◽  
The Relationship

Thermoelectric modules, consisting of multiple pairs of n- and p-type legs, enable converting heat into electricity and vice versa. However, the thermoelectric performance is often asymmetrical, in that one type outperforms the other. In this paper, we identified the relationship between the asymmetrical thermoelectric performance and the weighted mobility ratio, a correlation that can help predict the thermoelectric performance of unreported materials. Here, a reasonably high ZT for the n-type ZrCoBi-based half-Heuslers is first predicted and then experimentally verified. A high peak ZT of ~1 at 973 K can be realized by ZrCo0.9Ni0.1Bi0.85Sb0.15. The measured heat-to-electricity conversion efficiency for the unicouple of ZrCoBi-based materials can be as high as ~10% at the cold-side temperature of ~303 K and at the hot-side temperature of ~983 K. Our work demonstrates that the ZrCoBi-based half-Heuslers are highly promising for the application of mid- and high-temperature thermoelectric power generation.

scholarly journals Computational prediction of the thermoelectric performance of LaZnOPn (Pn = P, As)

2020 ◽  
Vol 8 (16) ◽  
pp. 7914-7924 ◽  
Author(s):  
Maud Einhorn ◽  
Benjamin A. D. Williamson ◽  
David O. Scanlon
Keyword(s):  
Density Functional Theory ◽  
High Temperature ◽  
Thermoelectric Materials ◽  
Density Functional ◽  
State Of The Art ◽  
Computational Prediction ◽  
Thermoelectric Performance ◽  
Functional Theory ◽  
Earth Abundant ◽  
P Type

State-of-the-art density functional theory is used to demonstrate that LaZnOP and LaZnOAs have great potential as earth-abundant p-type thermoelectric materials for high-temperature applications.

scholarly journals Optimal Carrier Concentration for High Thermoelectric Performance of Lead Substituted Bismuth Telluride in p-Type Doping

2018 ◽  
Vol 28 (2) ◽  
pp. 169
Author(s):  
Van Quang Tran
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Materials ◽  
Density Functional ◽  
Room Temperature ◽  
Density Functional Theory Calculation ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
P Type

Bi\(_{2}\)Te\(_{3}\) and its alloys are the well-known state-of-the-art thermoelectric materials operating at around room temperature. With lead substituted, the newly formed quasi-binary compound PbBi\(_{4}\)Te\(_{7}\), shows relatively high electrical conductivity and Seebeck coefficient. In this report, we employed the solution of the Boltzmann Transport Equation in a constant relaxation-time approximation within a first-principles density-functional-theory calculation to explore the role of the electronic thermal conductivity, \(\kappa _{e}\), on the thermoelectric performance of the compound with p-type doping. Results show that \(\kappa _{e}\) increases drastically with the increases of both temperature and carrier concentration. Even the power factor has been found to be markedly improved with the increase of the carrier concentration, a rapid increase of \(\kappa _{e}\) emerges as a big hindrance to improve the dimensionless figure of merit, ZT, of the compound. This is responsible for the limit of ZT. The larger ZT is found in low temperatures and carrier concentrations. The highest ZT of about 0.48 occurs at 223 K and at the carrier concentration of \(6\times 10^{17}\)cm\(^{ - 3}\). At room temperature the maximum ZT is slightly smaller. We demonstrated that at a particular temperature to maximize the thermoelectric performance of the compound, the carrier concentration must be optimized. Results show that the compound with p-type doping is a promising thermoelectric materials operating at around room temperature.

Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions

2015 ◽  
Vol 3 (32) ◽  
pp. 8372-8380 ◽  
Author(s):  
Gangjian Tan ◽  
Hang Chi ◽  
Wei Liu ◽  
Yun Zheng ◽  
Xinfeng Tang ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Electron Channel ◽  
Mobility Degradation ◽  
In Situ Formation ◽  
P Type

The InSb nanoinclusions formed in situ at the grain boundaries of FeSb2.2Te0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

BiCuSeO oxyselenides: new promising thermoelectric materials

2014 ◽  
Vol 7 (9) ◽  
pp. 2900-2924 ◽  
Author(s):  
Li-Dong Zhao ◽  
Jiaqing He ◽  
David Berardan ◽  
Yuanhua Lin ◽  
Jing-Feng Li ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Materials ◽  
Electronic Structures ◽  
Chemical Properties ◽  
Thermoelectric Performance ◽  
Physical Chemical ◽  
System P

This review summarizes the crystal structures, microstructures, electronic structures, physical/chemical properties, and effective methods to enhance the thermoelectric performance of the BiCuSeO system.

Efficient lanthanide Gd Doping Promoting Thermoelectric Performance of Mg3Sb2-based Materials

2021 ◽  
Author(s):  
Jingdan Lei ◽  
Hexige Wuliji ◽  
Kunpeng Zhao ◽  
Tian-Ran Wei ◽  
Qing Xu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Materials ◽  
Carrier Mobility ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
High Carrier Mobility ◽  
High Carrier ◽  
High Band

Mg3Sb2-based thermoelectric materials have recently received heightened attentions due to its diverse merits of high band degeneracy, ultralow lattice thermal conductivity and high carrier mobility. However, the inherently low carrier...

p‐Type Plastic Inorganic Thermoelectric Materials

2021 ◽  
pp. 2100883
Author(s):  
Zhiqiang Gao ◽  
Qingyu Yang ◽  
Pengfei Qiu ◽  
Tian‐Ran Wei ◽  
Shiqi Yang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
P Type
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