Graphene-coated copper nanowire networks as a highly stable transparent electrode in harsh environments toward efficient electrocatalytic hydrogen evolution reactions

2017 ◽  
Vol 5 (26) ◽  
pp. 13320-13328 ◽  
Author(s):  
Arumugam Manikandan ◽  
Ling Lee ◽  
Yi-Chung Wang ◽  
Chia-Wei Chen ◽  
Yu-Ze Chen ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Harsh Environments ◽  
Copper Nanowire ◽  
Transparent Conducting ◽  
Vapor Deposition Technique ◽  
Hydrogen Evolution Reactions ◽  
Nanowire Networks

Copper nanowire networks (NWs) coated with a graphene layer through a carbon-enclosed chemical vapor deposition technique at a low temperature of 400 °C with a low sheet resistance of 23.2 Ω sq−1 and a high transmittance of 83.4%, which is comparable to typical values of tin-doped indium oxide (ITO), as a transparent conducting electrode were demonstrated.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

scholarly journals Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1105
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Muhammad Fahad Ehsan ◽  
Asad Mumtaz ◽  
Manzar Sohail ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Sulfide ◽  
Variable Temperature ◽  
Complex Impedance ◽  
Equivalent Circuit Model ◽  
Chemical Vapor ◽  
Relaxation Processes ◽  
Impedance Plot ◽  
Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

scholarly journals Structural and Magnetic Properties of Ni81Fe19Thin Film Grown on Si(001) Substrate via Single Graphene Layer

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Structural Investigation ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Magnetic Thin Films ◽  
Structural And Magnetic Properties

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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