Single phase, high hole mobility Cu2O films as an efficient and robust hole transporting layer for organic solar cells

2017 ◽  
Vol 5 (22) ◽  
pp. 11055-11062 ◽  
Author(s):  
Yaxiong Guo ◽  
Hongwei Lei ◽  
Liangbin Xiong ◽  
Borui Li ◽  
Zhao Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Organic Solar Cells ◽  
Single Phase ◽  
Power Conversion ◽  
High Mobility ◽  
Hole Mobility ◽  
Reactive Magnetron ◽  
Hole Transporting ◽  
Cu2o Films ◽  
P Type

We show that high mobility p-type near-stoichiometric cuprous films (Cu2O) can be prepared by reactive magnetron sputtering. The highest power conversion efficiency of the OSCs based on PTB7:PC71BM system reaches 8.61%.

scholarly journals A simple synthesis of transparent and highly conducting p-type CuxAl1−xSy nanocomposite thin films as the hole transporting layer for organic solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16887-16896 ◽  
Author(s):  
Xin Dai ◽  
Hongwei Lei ◽  
Cong Chen ◽  
Yaxiong Guo ◽  
Guojia Fang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
High Mobility ◽  
Simple Synthesis ◽  
Inorganic P ◽  
Nanocomposite Thin Films ◽  
Hole Transporting ◽  
P Type

Inorganic p-type films with high mobility are very important for opto-electronic applications.

Synthesis of visible-light-absorptive and hole-transporting periodic mesoporous organosilica thin films for organic solar cells

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Visible Light ◽  
Organic Solar Cells ◽  
Mesoporous Films ◽  
Periodic Mesoporous Organosilica ◽  
Mesoporous Organosilica ◽  
Type Layer ◽  
Hole Transporting ◽  
P Type

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.

P-type indium oxide thin film for the hole-transporting layer of organic solar cells

2012 ◽  
Vol 520 (7) ◽  
pp. 3118-3124 ◽  
Author(s):  
Pingli Qin ◽  
Guojia Fang ◽  
Nanhai Sun ◽  
Xi Fan ◽  
Qiao Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Indium Oxide ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Hole Transporting ◽  
P Type ◽  
Indium Oxide Thin Film

Facile star-shaped tetraphenylethylene-based molecules with fused ring-terminated diarylamine as interfacial hole transporting materials for inverted perovskite solar cells

2021 ◽  
Author(s):  
Yung-Chung Chen ◽  
Ding-Zhi Lin ◽  
Jhong-Ci Wang ◽  
Jen-Shyang Ni ◽  
Yang-Yen Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Small Molecules ◽  
Power Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
The Core ◽  
Fused Ring ◽  
Hole Transporting ◽  
P Type ◽  
Hole Transporting Materials

Three p-type small molecules (CL-1–3) based on tetraphenylethylene as the core and different π-conjugation diarylamines as linkers are synthesized. The bilayer HTL of the NiOx/CL-3-based cell exhibits the best power conversion efficiency of 20.15%.

scholarly journals The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2376 ◽  
Author(s):  
Song-Sheng Lin ◽  
Qian Shi ◽  
Ming-Jiang Dai ◽  
Kun-Lun Wang ◽  
Sheng-Chi Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Incident Light ◽  
Transparent Conductive Oxide ◽  
Optoelectronic Properties ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Mg Doping ◽  
P Type

CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1.

scholarly journals Synthesis and characterization of single-phase epitaxial Cr2N thin films by reactive magnetron sputtering

2018 ◽  
Vol 54 (2) ◽  
pp. 1434-1442 ◽  
Author(s):  
M. A. Gharavi ◽  
G. Greczynski ◽  
F. Eriksson ◽  
J. Lu ◽  
B. Balke ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Phase ◽  
Reactive Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Reactive Magnetron

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

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