scholarly journals Effect of OH− on chemical mechanical polishing of β-Ga2O3 (100) substrate using an alkaline slurry

RSC Advances ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 6544-6550 ◽  
Author(s):  
Chuanjin Huang ◽  
Wenxiang Mu ◽  
Hai Zhou ◽  
Yongwei Zhu ◽  
Xiaoming Xu ◽  
...  
Keyword(s):  
High Power ◽  
Chemical Mechanical Polishing ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Material ◽  
Mechanical Polishing ◽  
Power Devices ◽  
Potential Applications

β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors.

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Thin Film Diamond Field Effect Transistors For High Power Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
Hui Jin Looi ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Film Material ◽  
Near Surface ◽  
Suitable Material ◽  
P Type

AbstractEarly predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors
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