Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation

2021 ◽  
pp. 8956-8962
Author(s):  
Lu Wang ◽  
Hongyu Zhu ◽  
Dianzhong Wen
Keyword(s):  
Gold Nanoparticles ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Blocking Effect ◽  
Multilevel Data ◽  
Access Memory

scholarly journals Multilevel data storage memory based on polycrystalline SrTiO3 ultrathin film

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49753-49758 ◽  
Author(s):  
Pengfei Hou ◽  
Zhanzhan Gao ◽  
Kaikai Ni
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ultrathin Film ◽  
Multilevel Data ◽  
Access Memory ◽  
Operation Speed ◽  
Commercial Interest ◽  
High Scalability

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

2017 ◽  
Vol 28 (11) ◽  
pp. 115707 ◽  
Author(s):  
Fekadu Gochole Aga ◽  
Jiyong Woo ◽  
Jeonghwan Song ◽  
Jaehyuk Park ◽  
Seokjae Lim ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Conductive Bridge

scholarly journals Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2085
Author(s):  
Lu Wang ◽  
Tianyu Yang ◽  
Dianzhong Wen
Keyword(s):  
Carbon Nanotubes ◽  
Data Storage ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Multilevel Data ◽  
Access Memory ◽  
Current Limit ◽  
Egg Albumen

In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

Broadband photoelectric tunable quantum dot based resistive random access memory

2020 ◽  
Vol 8 (6) ◽  
pp. 2178-2185 ◽  
Author(s):  
Zhiliang Chen ◽  
Yu Yu ◽  
Lufan Jin ◽  
Yifan Li ◽  
Qingyan Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Storage Ability

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

scholarly journals Flexible Electronics: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)

Small ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 265-265 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Resistance switching behavior of ZnO thin films for random access memory applications

2013 ◽  
Vol 16 (1) ◽  
pp. 81-85
Author(s):  
Trung Do Nguyen ◽  
Van Thuy Dao ◽  
Kim Ngoc Pham ◽  
Thi Kieu Hanh Ta ◽  
Tran Le ◽  
...  
Keyword(s):  
Data Storage ◽  
Glass Structure ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Switching Mode ◽  
Memory Applications ◽  
Dc Sputtering Technique

We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

Small ◽  
2015 ◽  
Vol 12 (3) ◽  
pp. 390-396 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory
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