scholarly journals InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26665-26672 ◽  
Author(s):  
Chao Zhao ◽  
Tien Khee Ng ◽  
Chien-Chih Tseng ◽  
Jun Li ◽  
Yumeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Superior Performance ◽  
Large Area ◽  
Light Emitters ◽  
High Quality ◽  
Light Emitting ◽  
Gan Nanowires ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal

High-quality nitride nanowires on large-area layered transition metal dichalcogenides are first reported, which yielded light-emitting diodes (LEDs) with superior performance.

scholarly journals Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sayantan Ghosh ◽  
Abin Varghese ◽  
Kartikey Thakar ◽  
Sushovan Dhara ◽  
Saurabh Lodha
Keyword(s):  
Laser Power ◽  
High Performance ◽  
Flicker Noise ◽  
Transition Metal Dichalcogenides ◽  
Conducting Channel ◽  
Switching Speed ◽  
Wide Range ◽  
Metal Dichalcogenides ◽  
Added Benefit ◽  
Layered Transition Metal

AbstractLayered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is their trap-dependent photoresponse that trades off responsivity with speed. This work demonstrates a facile method of attenuating this trade-off by nearly 2x through integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor. The tunable p-n junction allows modulation of the photocarrier population and width of the conducting channel independently from the phototransistor. Increased illumination current with the lateral p-n junction helps achieve responsivity enhancement upto 2.4x at nearly the same switching speed (14–16 µs) over a wide range of laser power (300 pW–33 nW). The added benefit of reduced dark current enhances specific detectivity (D*) by nearly 25x to yield a maximum measured flicker noise-limited D* of 1.1×1012 Jones. High responsivity of 170 A/W at 300 pW laser power along with the ability to detect sub-1 pW laser switching are demonstrated.

scholarly journals Methane-Mediated Vapor Transport Growth of Monolayer WSe2 Crystals

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1642
Author(s):  
Hyeon-Sik Jang ◽  
Jae-Young Lim ◽  
Seog-Gyun Kang ◽  
Sang-Hwa Hyun ◽  
Sana Sandhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal Dichalcogenides ◽  
Nucleation Density ◽  
Large Area ◽  
High Quality ◽  
Catalytic Growth ◽  
Production Methods ◽  
Metal Dichalcogenides ◽  
Device Applications ◽  
P Type

The electrical and optical properties of semiconducting transition metal dichalcogenides (TMDs) can be tuned by controlling their composition and the number of layers they have. Among various TMDs, the monolayer WSe2 has a direct bandgap of 1.65 eV and exhibits p-type or bipolar behavior, depending on the type of contact metal. Despite these promising properties, a lack of efficient large-area production methods for high-quality, uniform WSe2 hinders its practical device applications. Various methods have been investigated for the synthesis of large-area monolayer WSe2, but the difficulty of precisely controlling solid-state TMD precursors (WO3, MoO3, Se, and S powders) is a major obstacle to the synthesis of uniform TMD layers. In this work, we outline our success in growing large-area, high-quality, monolayered WSe2 by utilizing methane (CH4) gas with precisely controlled pressure as a promoter. When compared to the catalytic growth of monolayered WSe2 without a gas-phase promoter, the catalytic growth of the monolayered WSe2 with a CH4 promoter reduced the nucleation density to 1/1000 and increased the grain size of monolayer WSe2 up to 100 μm. The significant improvement in the optical properties of the resulting WSe2 indicates that CH4 is a suitable candidate as a promoter for the synthesis of TMD materials, because it allows accurate gas control.

scholarly journals High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping

Abstract Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition (CVD) approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 x 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is adverse to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

scholarly journals MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2805
Author(s):  
Geun Yeol Bae ◽  
Jinsung Kim ◽  
Junyoung Kim ◽  
Siyoung Lee ◽  
Eunho Lee
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Charge Carrier Mobility ◽  
Large Area ◽  
Electrical Devices ◽  
Phase Tuning ◽  
Metal Dichalcogenides

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T’) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

One-dimensional transition metal dichalcogenides lateral heterostructures

2021 ◽  
Author(s):  
Jin-Wu Jiang
Keyword(s):  
Transition Metal ◽  
Electron Tunneling ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
High Quality ◽  
Light Emitting ◽  
One Dimensional ◽  
Metal Dichalcogenides ◽  
Established Technique

Heterostructure is a well-established technique to utilize different constituting materials to accomplish novel properties like efficient light-emitting and high-quality electron tunneling. Recent experiments have successfully synthesized one-dimensional van der Waals...

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals High-performance flexible nanoscale transistors based on transition metal dichalcogenides

2021 ◽  
Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Nanoscale Transistors

scholarly journals The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping ◽  
Sharp Interfaces

AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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