Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (38) ◽  
pp. 20017-20023 ◽  
Author(s):  
Hyeon Gyun Yoo ◽  
Seungjun Kim ◽  
Keon Jae Lee
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Plastic Substrates ◽  
Resistive Switching Memory ◽  
Change Material ◽  
Switching Memory

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

scholarly journals Dynamic conductance characteristics in HfOx-based resistive random access memory

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12984-12989 ◽  
Author(s):  
Ying-Chen Chen ◽  
Yao-Feng Chang ◽  
Xiaohan Wu ◽  
Fei Zhou ◽  
Meiqi Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Dynamic Conductance ◽  
Switching Memory

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

A ferroelectric memristor based on the migration of oxygen vacancies

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 54113-54118 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuexian Wu
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Non Destructive ◽  
Switching Memory

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88166-88170 ◽  
Author(s):  
Wei-Kang Hsieh ◽  
Ricky W. Chuang ◽  
Shoou-Jinn Chang
Keyword(s):  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Fabrication And Characterization ◽  
Switching Memory

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

High performance perovskite memristor by integrating tip shape contact

2021 ◽  
Author(s):  
Su-Ting Han ◽  
Jiangming Chen ◽  
Zihao Feng ◽  
Mingtao Luo ◽  
Junjie Wang ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Ion Migration ◽  
Halide Perovskite

Resistive random access memory (RRAM) based on hybrid organic-inorganic halide perovskite (HOIP) has recently gained significant interests due to its low activation energy of ion migration. HOIP RRAM has been...

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