scholarly journals Composition-controlled synthesis and tunable optical properties of ternary boron carbonitride nanotubes

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12511-12517 ◽  
Author(s):  
Hongling Li ◽  
Roland Yingjie Tay ◽  
Siu Hon Tsang ◽  
Lin Jing ◽  
Minmin Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
Band Gaps ◽  
Controlled Synthesis ◽  
Boron Carbonitride ◽  
Optical Band Gaps ◽  
Tunable Optical Properties

Ternary boron nitride nanotubes (BCNNTs) with controllable compositions and tunable optical band gaps have been successfully achieved.

Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

2018 ◽  
Vol 32 (06) ◽  
pp. 1850084 ◽  
Author(s):  
Yi-Min Ding ◽  
Jun-Jie Shi ◽  
Min Zhang ◽  
Meng Wu ◽  
Hui Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Band Gaps ◽  
Hybrid Structures ◽  
Electronic And Optical Properties ◽  
Boron Nitride Nanosheet ◽  
Optoelectronic Nanodevices

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Synthesis and optical properties of single-crystalline SnS1−xSex nanobelts

2020 ◽  
Vol 35 (4) ◽  
pp. 276-281
Author(s):  
Shengru Wang ◽  
Xiaofang Lai ◽  
Bingsheng Du ◽  
Junhao Ma ◽  
Peihua Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Property ◽  
Doping Concentration ◽  
Band Gaps ◽  
Phonon Modes ◽  
Facile Hydrothermal Method ◽  
One Dimensional ◽  
Optical Band Gaps ◽  
Structure Morphology ◽  
Se Doping

In this work, SnS1−xSex ternary nanobelts were synthesized by a facile hydrothermal method without the assistance of surfactants. The structure, morphology, microstructure, compositions, chemical valences, phonon modes, and optical band gaps of the SnS1−xSex nanobelts were characterized in detail. The results indicate that the SnS1−xSex nanobelts have uniform one-dimensional morphology and are single crystals with high crystallinity. Se is incorporated into the SnS lattice to substitute for S-forming ternary SnS1−xSex alloy. With the increase of Se doping concentration, the optical band gaps of the nanobelts gradually decrease from 1.15 to 1.01 eV, confirming the tunable optical property achieved here.

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