Electronic properties of tin iodide hybrid perovskites: effect of indium doping

2018 ◽  
Vol 2 (7) ◽  
pp. 1291-1295 ◽  
Author(s):  
Keisuke Kobayashi ◽  
Hiroyuki Hasegawa ◽  
Yukihiro Takahashi ◽  
Jun Harada ◽  
Tamotsu Inabe
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Carrier Concentration ◽  
Electronic Devices ◽  
Design Strategy ◽  
Metal Doping ◽  
Indium Doping ◽  
Tin Iodide ◽  
Solution Processable

For solution-processable tin iodide cubic perovskites, a small amount of indium doping reduced the conductivity without changing the band gap or the carrier concentration. We demonstrated another possibility of foreign metal doping in tin iodide cubic perovskites and displayed a design strategy for electronic devices using hybrid perovskites.

Solution processable low bandgap thienoisoindigo-based small molecules for organic electronic devices

RSC Advances ◽  
2015 ◽  
Vol 5 (62) ◽  
pp. 50098-50104 ◽  
Author(s):  
Pei Han ◽  
Xiaohui Gong ◽  
Baoping Lin ◽  
Zhenhong Jia ◽  
Shanghui Ye ◽  
...  
Keyword(s):  
Small Molecules ◽  
Band Gap ◽  
Electronic Devices ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Low Band Gap ◽  
Low Bandgap ◽  
Solution Processable

Two new low-band gap thienoisoindigo-based small molecules applied in OFET and OPV devices.

Effective band gap tuning by foreign metal doping in hybrid tin iodide perovskites

2017 ◽  
Vol 5 (16) ◽  
pp. 4048-4052 ◽  
Author(s):  
Hiroyuki Hasegawa ◽  
Keisuke Kobayashi ◽  
Yukihiro Takahashi ◽  
Jun Harada ◽  
Tamotsu Inabe
Keyword(s):  
Band Gap ◽  
Conduction Band ◽  
Metal Doping ◽  
Tin Iodide ◽  
Band Gap Tuning ◽  
Bismuth Doping

Band gap reduction down to 0.8 eV is observed in tin iodide-based hybrid perovskites as a result of bismuth doping. The band gap reduction originated because of lowering of the conduction band energies. In spite of the foreign metal doping, the number of carriers is not affected.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Intercalation of First Row Transition Metals inside Covalent-Organic Frameworks (COF): a Strategy to Fine Tune the Electronic Properties of Porous Crystalline Materials

2018 ◽  
Author(s):  
Srimanta Pakhira ◽  
Jose Mendoza-Cortes
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Electronic Properties ◽  
High Surface ◽  
Electronic Devices ◽  
High Surface Area ◽  
Main Role ◽  
Covalent Organic Frameworks ◽  
Porous Network ◽  
Crystalline Materials

<div>Covalent organic frameworks (COFs) have emerged as an important class of nano-porous crystalline materials with many potential applications. They are intriguing platforms for the design of porous skeletons with special functionality at the molecular level. However, despite their extraordinary properties, it is difficult to control their electronic properties, thus hindering the potential implementation in electronic devices. A new form of nanoporous material, COFs intercalated with first row transition metal is proposed to address this fundamental drawback - the lack of electronic tunability. Using first-principles calculations, we have designed 31 new COF materials <i>in-silico</i> by intercalating all of the first row transition metals (TMs) with boroxine-linked and triazine-linked COFs: COF-TM-x (where TM=Sc-Zn and x=3-5). This is a significant addition considering that only 187 experimentally COFs structures has been reported and characterized so far. We have investigated their structure and electronic properties. Specifically, we predict that COF's band gap and density of states (DOSs) can be controlled by intercalating first row transition metal atoms (TM: Sc - Zn) and fine tuned by the concentration of TMs. We also found that the $d$-subshell electron density of the TMs plays the main role in determining the electronic properties of the COFs. Thus intercalated-COFs provide a new strategy to control the electronic properties of materials within a porous network. This work opens up new avenues for the design of TM-intercalated materials with promising future applications in nanoporous electronic devices, where a high surface area coupled with fine-tuned electronic properties are desired.</div>

scholarly journals Hole-transporting side-chain polystyrenes based on TCTA with tuned glass transition and optimized electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (101) ◽  
pp. 83122-83128 ◽  
Author(s):  
Felix R. P. Limberg ◽  
Arunas Miasojedovas ◽  
Patrick Pingel ◽  
Felix Reisbeck ◽  
Silvia Janietz ◽  
...  
Keyword(s):  
Glass Transition ◽  
Electronic Properties ◽  
Significant Influence ◽  
Life Time ◽  
Side Chain ◽  
Hole Transporting ◽  
Solution Processable

The development of crosslinkable materials for solution processable OLEDs presents challenges, especially regarding the adjustment of the glass transition, which has a significant influence on crosslinking kinetics and device life-time.

Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Plane Strain ◽  
Material Properties ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Direct Band ◽  
Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

2006 ◽  
Vol 24 (3) ◽  
pp. 1622 ◽  
Author(s):  
R. Magno ◽  
E. R. Glaser ◽  
B. P. Tinkham ◽  
J. G. Champlain ◽  
J. B. Boos ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Electronic Devices

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

scholarly journals Hydration Dependent Band Gap Tunability of Self-Assembled Phenylalanine-Tryptophan Nanotubes

2020 ◽  
Author(s):  
Hugo Souza ◽  
Antonio Chaves Neto ◽  
Francisco Sousa ◽  
Rodrigo Amorim ◽  
Alexandre Reily Rocha ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Band Gap ◽  
Electronic Properties ◽  
Building Block ◽  
Density Functional ◽  
Tight Binding ◽  
Water Molecules ◽  
Confined Water ◽  
Functional Theory ◽  
Tight Binding Method

In this work, we investigate the effects of building block separation of Phenylalanine-Tryptophan nanotube induced by the confined water molecules on the electronic properties using density-functional theory based tight-binding method. <div><br></div>

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