Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 13261-13269 ◽  
Author(s):  
Hyeon Han ◽  
Donghoon Kim ◽  
Sangmin Chae ◽  
Jucheol Park ◽  
Sang Yeol Nam ◽  
...  

Switchable ferroelectric photovoltaic effects in hexagonal ferrite (h-RFeO3) thin films having narrow band gaps are presented.

ChemInform ◽  
2016 ◽  
Vol 47 (5) ◽  
pp. no-no
Author(s):  
Hyeon Han ◽  
Seungwoo Song ◽  
June Ho Lee ◽  
Kun Joong Kim ◽  
Guan-Woo Kim ◽  
...  

2015 ◽  
Vol 27 (21) ◽  
pp. 7425-7432 ◽  
Author(s):  
Hyeon Han ◽  
Seungwoo Song ◽  
June Ho Lee ◽  
Kun Joong Kim ◽  
Guan-Woo Kim ◽  
...  

2018 ◽  
Vol 10 (2) ◽  
pp. 1846-1853 ◽  
Author(s):  
Hyeon Han ◽  
Donghoon Kim ◽  
Kanghyun Chu ◽  
Jucheol Park ◽  
Sang Yeol Nam ◽  
...  

2020 ◽  
Vol 116 (13) ◽  
pp. 132901 ◽  
Author(s):  
Hiroki Matsuo ◽  
Yuji Noguchi ◽  
Masaru Miyayama ◽  
Takanori Kiguchi ◽  
Toyohiko J. Konno

2019 ◽  
Vol 2 (12) ◽  
pp. 7755-7765 ◽  
Author(s):  
Runjiang Guo ◽  
Ran Tian ◽  
Dongliang Shi ◽  
Hua Li ◽  
Hezhou Liu

2012 ◽  
Vol 520 (22) ◽  
pp. 6786-6792 ◽  
Author(s):  
J.H. Selj ◽  
T. Mongstad ◽  
B.C. Hauback ◽  
S.Zh. Karazhanov

2000 ◽  
Vol 112 (9) ◽  
pp. 1761-1763 ◽  
Author(s):  
Shigehiro Yamaguchi ◽  
Tomoyuki Goto ◽  
Kohei Tamao

2017 ◽  
Vol 114 ◽  
pp. 1169-1175 ◽  
Author(s):  
Roger C. Palomera ◽  
Omar S. Martínez ◽  
J. Pantoja-Enriquez ◽  
N.R. Mathews ◽  
Martín G. Reyes-Banda ◽  
...  

2000 ◽  
Vol 42 (3) ◽  
pp. 522-527 ◽  
Author(s):  
V. K. Yarmarkin ◽  
B. M. Gol’tsman ◽  
M. M. Kazanin ◽  
V. V. Lemanov

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.


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