Strain relaxation and ambipolar electrical transport in GaAs/InSb core–shell nanowires

Nanoscale ◽  
2017 ◽  
Vol 9 (46) ◽  
pp. 18392-18401 ◽  
Author(s):  
Torsten Rieger ◽  
Patrick Zellekens ◽  
Natalia Demarina ◽  
Ali Al Hassan ◽  
Franz Josef Hackemüller ◽  
...  

The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core–shell nanowires grown using molecular beam epitaxy are investigated.

2015 ◽  
Vol 30 (10) ◽  
pp. 105036 ◽  
Author(s):  
Pavan Kumar Kasanaboina ◽  
Sai Krishna Ojha ◽  
Shifat Us Sami ◽  
C Lewis Reynolds ◽  
Yang Liu ◽  
...  

2014 ◽  
Vol 31 (7) ◽  
pp. 078103 ◽  
Author(s):  
Dong Pan ◽  
Si-Liang Wang ◽  
Hai-Long Wang ◽  
Xue-Zhe Yu ◽  
Xiao-Lei Wang ◽  
...  

2015 ◽  
Vol 107 (10) ◽  
pp. 103111 ◽  
Author(s):  
Pavan Kumar Kasanaboina ◽  
Estiak Ahmad ◽  
Jia Li ◽  
C. Lewis Reynolds ◽  
Yang Liu ◽  
...  

Nano Letters ◽  
2009 ◽  
Vol 9 (11) ◽  
pp. 3860-3866 ◽  
Author(s):  
Andreas Rudolph ◽  
Marcello Soda ◽  
Matthias Kiessling ◽  
Tomasz Wojtowicz ◽  
Dieter Schuh ◽  
...  

2017 ◽  
Vol 463 ◽  
pp. 10-13 ◽  
Author(s):  
Nripendra N. Halder ◽  
Alexander Kelrich ◽  
Yaron Kauffmann ◽  
Shimon Cohen ◽  
Dan Ritter

Author(s):  
Sai Krishna Ojha ◽  
Pavan Kumar Kasanaboina ◽  
Claude Lewis Reynolds ◽  
Thomas A. Rawdanowicz ◽  
Yang Liu ◽  
...  

2015 ◽  
Vol 127 (2) ◽  
pp. 517-519
Author(s):  
P.A. Misiuna ◽  
P. Dłużewski ◽  
T. Wojciechowski ◽  
S. Lewińska ◽  
A. Ślawska-Waniewska ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (1) ◽  
pp. 356-364 ◽  
Author(s):  
T. Rieger ◽  
D. Grützmacher ◽  
M. I. Lepsa

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5559-5564 ◽  
Author(s):  
Torsten Rieger ◽  
Martina Luysberg ◽  
Thomas Schäpers ◽  
Detlev Grützmacher ◽  
Mihail Ion Lepsa

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