Novel single-source precursors for SiBxCyNz film deposition

2017 ◽  
Vol 41 (20) ◽  
pp. 11926-11933 ◽  
Author(s):  
Ivan S. Merenkov ◽  
Boris A. Gostevskii ◽  
Pavel O. Krasnov ◽  
Tamara V. Basova ◽  
Yuri M. Zhukov ◽  
...  
Keyword(s):  
Film Deposition ◽  
Single Source ◽  
Single Source Precursors ◽  
First Time

A novel type of single-source CVD precursor – Me3SiCCB[N(SiMe3)2]2 – has been synthesized and successfully tested for the first time in SiBCN film deposition.

Volatility studies on single source precursors for LaNiO3 film deposition: Mass spectrometry and thermal analysis

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-661-Pr3-667 ◽  
Author(s):  
N. Kuzmina ◽  
I. Malkerova ◽  
M. Ryazanov ◽  
A. Alikhanyan ◽  
A. Rogachev ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thermal Analysis ◽  
Film Deposition ◽  
Single Source ◽  
Single Source Precursors

An efficient method for the synthesis of nickel phosphide nanocrystals via thermal decomposition of single-source precursors

RSC Advances ◽  
2015 ◽  
Vol 5 (16) ◽  
pp. 11952-11959 ◽  
Author(s):  
Yuan Pan ◽  
Yunqi Liu ◽  
Chenguang Liu
Keyword(s):  
Thermal Decomposition ◽  
Reaction Time ◽  
Reaction Temperature ◽  
Efficient Method ◽  
Nickel Phosphide ◽  
Single Source ◽  
Single Source Precursors ◽  
First Time

We report an efficient method for the synthesis of nickel phosphide NCs for the first time. The size of Ni2P NCs can be controlled by changing reaction temperature and OAm quantity. The phase of nickel phosphide NCs can be controlled by increasing reaction time.

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Solution state fluxionality and thermolysis reactions of bimetallic single source precursors for I-III-VI chalcopyrite materials

2018 ◽  
Vol 480 ◽  
pp. 189-196 ◽  
Author(s):  
Anh H.T. Nguyen ◽  
Jacob L. Tennant ◽  
Leah J. Maxton ◽  
Andrew W. Holland
Keyword(s):  
Single Source ◽  
Single Source Precursors ◽  
Solution State

Fluorinated Heterometallic β-Diketonates as Volatile Single-Source Precursors for the Synthesis of Low-Valent Mixed-Metal Fluorides

2011 ◽  
Vol 133 (4) ◽  
pp. 692-694 ◽  
Author(s):  
Anantharamulu Navulla ◽  
Alexander A. Tsirlin ◽  
Artem M. Abakumov ◽  
Roman V. Shpanchenko ◽  
Haitao Zhang ◽  
...  
Keyword(s):  
Single Source ◽  
Single Source Precursors ◽  
Mixed Metal ◽  
Metal Fluorides ◽  
Low Valent
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