High quality and high performance adsorption of Congo red using as-grown MWCNTs synthesized over a Co-MOF as a catalyst precursor via the CVD method

2017 ◽  
Vol 46 (48) ◽  
pp. 17067-17073 ◽  
Author(s):  
Hong-Yan Lin ◽  
Jing Zhao ◽  
Ge Song ◽  
Jian Luan ◽  
Xiang-Xiang Liu ◽  
...  
Keyword(s):  
Congo Red ◽  
High Performance ◽  
Catalyst Precursor ◽  
High Quality ◽  
Cvd Method

A Co-MOF has been synthesized and characterized, which was firstly used as a combined catalyst precursor to synthesize MWCNTs with high performance in the adsorption of CR.

High Performance A–Si Solar Cells and Narrow Bandgap Materials

1985 ◽  
Vol 49 ◽  
Author(s):  
Shoichi Nakano ◽  
Yasuo Kishi ◽  
Michitoshi Ohnishi ◽  
Shinya Tsuda ◽  
Hisashi Shibuya ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
High Performance ◽  
Reaction Chamber ◽  
Interface Properties ◽  
High Quality ◽  
Cvd Method ◽  
Si Solar Cells ◽  
Narrow Bandgap ◽  
First Time

AbstractHigh performance a-Si solar cells were developed. A conversion efficiency of 11.5% was achieved for a textured TCO/p-SiC/in/Ag structure with a size of 1 cm2 using the high quality i-layer fabricated by a new consecutive, separated reaction chamber apparatus. A conversion efficiency of 9.0% was obtained with a size of 10cm × 10cm. A high quality a-SiGe:H:F, which is a new narrow bandgap material for a-Si solar cells, was fabricated by a glow discharge decomposition of SiF4 + GeF4 + H2.A photo-CVD method was investigated in order to improve the interface properties of a–Si solar cells. A conversion efficiency of 11.0% was obtained with a solar cell in which the p-layer is fabricated by the photo-CVD method. a-SiGe:H films were fabricated by the photo-CVD method for the first time as a narrow bandgap material for multi-bandgap a-Si solar cells.

scholarly journals Growth of a Large, Single-Crystalline WS2 Monolayer for High-Performance Photodetectors by Chemical Vapor Deposition

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 137
Author(s):  
Ying Chen
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Fast Response ◽  
Tungstic Acid ◽  
Large Area ◽  
High Quality ◽  
Promising Candidate ◽  
Cvd Method ◽  
Ws2 Nanosheets ◽  
Ws2 Monolayer

2D WS2 is a promising candidate for the next generation nanoelectronics, spintronics, valleytronics, and optoelectronics. However, the uncontrollably large-area growth of WS2 nanosheets and their unsatisfactory performance of the photodetectors based on WS2 hindered its applications. Here, we proposed a CVD method using tungstic acid as the precursors to grow WS2 flakes. After being characterized by AFM, Raman, PL, and TEM, we found the as-grown WS2 flakes were high-quality structures. Then the photodetectors based on the as-grown WS2 were fabricated, which exhibited high responsivity (7.3 A W−1), a fast response rate (a response time of 5 ms and a recovery time of 7 ms), prefect external quantum efficiency (EQE) (1814%), and remarkable detectivity (D*) (3.4 × 1012 Jones). Our works provided a new CVD method to grow some high-quality WS2 nanosheets.

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

scholarly journals Semiconductor Heteroepitaxy

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 229
Author(s):  
Roberto Bergamaschini ◽  
Elisa Vitiello
Keyword(s):  
High Performance ◽  
Next Generation ◽  
High Quality

The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of high-quality materials and complex designs [...]

High-performance inverted planar perovskite solar cells without a hole transport layer via a solution process under ambient conditions

2015 ◽  
Vol 3 (38) ◽  
pp. 19294-19298 ◽  
Author(s):  
Xichang Bao ◽  
Qianqian Zhu ◽  
Meng Qiu ◽  
Ailing Yang ◽  
Yujin Wang ◽  
...  
Keyword(s):  
Relative Humidity ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Solution Process ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Ambient Conditions ◽  
High Quality ◽  
Ito Glass

High-quality CH3NH3PbI3 perovskite films were directly prepared on simple treated ITO glass in air under a relative humidity of lower than 30%.

scholarly journals Ambient Air Temperature Assisted Crystallization for Inorganic CsPbI2Br Perovskite Solar Cells

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3398
Author(s):  
Yi Long ◽  
Kun Liu ◽  
Yongli Zhang ◽  
Wenzhe Li
Keyword(s):  
Solar Cells ◽  
Air Temperature ◽  
High Performance ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Ambient Air ◽  
Dark Phase ◽  
High Quality ◽  
Ambient Air Temperature ◽  
Air Atmosphere

Inorganic cesium lead halide perovskites, as alternative light absorbers for organic–inorganic hybrid perovskite solar cells, have attracted more and more attention due to their superb thermal stability for photovoltaic applications. However, the humid air instability of CsPbI2Br perovskite solar cells (PSCs) hinders their further development. The optoelectronic properties of CsPbI2Br films are closely related to the quality of films, so preparing high-quality perovskite films is crucial for fabricating high-performance PSCs. For the first time, we demonstrate that the regulation of ambient temperature of the dry air in the glovebox is able to control the growth of CsPbI2Br crystals and further optimize the morphology of CsPbI2Br film. Through controlling the ambient air temperature assisted crystallization, high-quality CsPbI2Br films are obtained, with advantages such as larger crystalline grains, negligible crystal boundaries, absence of pinholes, lower defect density, and faster carrier mobility. Accordingly, the PSCs based on as-prepared CsPbI2Br film achieve a power conversion efficiency of 15.5% (the maximum stabilized power output of 15.02%). Moreover, the optimized CsPbI2Br films show excellent robustness against moisture and oxygen and maintain the photovoltaic dark phase after 3 h aging in an air atmosphere at room temperature and 35% relative humidity (R.H.). In comparison, the pristine films are completely converted to the yellow phase in 1.5 h.

scholarly journals Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Ying Wang ◽  
Zaixing Yang ◽  
Xiaofeng Wu ◽  
Ning Han ◽  
Hanyu Liu ◽  
...  
Keyword(s):  
High Quality ◽  
Photovoltaic Properties ◽  
Cvd Method ◽  
Gaas Nanowires
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