Synthesis of copper hydride (CuH) from CuCO3·Cu(OH)2 – a path to electrically conductive thin films of Cu

2017 ◽  
Vol 46 (20) ◽  
pp. 6533-6543 ◽  
Author(s):  
Cláudio M. Lousada ◽  
Ricardo M. F. Fernandes ◽  
Nadezda V. Tarakina ◽  
Inna L. Soroka
Keyword(s):  
Thin Films ◽  
High Purity ◽  
Aqueous Media ◽  
Copper Hydride ◽  
Electrically Conductive ◽  
Conductive Thin Films

High purity CuH nano-sized particles have been synthesized in aqueous media and then converted to electrically conductive thin films.

scholarly journals Electrically Conductive Thin Films Based on Nanofibrillated Cellulose: Interactions with Water and Applications in Humidity Sensing

2020 ◽  
Vol 12 (32) ◽  
pp. 36437-36448 ◽  
Author(s):  
Katariina Solin ◽  
Maryam Borghei ◽  
Ozlem Sel ◽  
Hannes Orelma ◽  
Leena-Sisko Johansson ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanofibrillated Cellulose ◽  
Electrically Conductive ◽  
Humidity Sensing ◽  
Conductive Thin Films

Preparation and Properties of Infrared Transparent Condutive Thin Films

2009 ◽  
Vol 1220 ◽  
Author(s):  
Yiding Wang ◽  
Li Li ◽  
Junjing Chen ◽  
Zhenyu Song ◽  
Yupeng An ◽  
...  
Keyword(s):  
Thin Films ◽  
Great Influence ◽  
Preparation Condition ◽  
Infrared Transmission ◽  
Electrically Conductive ◽  
X Ray ◽  
Atomic Force ◽  
Visible Transmittance ◽  
Ir Transmission ◽  
Conductive Thin Films

AbstractThis paper presents results for infrared transparent and conducting thin films based on In2O3. The films have been prepared by magnetrons sputtering equipment with different condition. Typical transmittance of 70%-80% with a film sheet resistance of 80-300Ω/□ in the 3.5-5.0μrn region has been achieved.Optically transparent and electrically conductive semiconductor Oxide films have been extensively studied in recent years. Such films have been prepared by various methods. In general, these films have high visible transmittance, but are opaque in the IR wavelength range of 1-12μm IR transmission. The infrared transparent and electrically conductive thin films are useful in certain important applications. For example, these films can be use as antistatic coatings, and while permitting a reasonable transmission coefficient for IR. Another obvious application is to serve as the conducting electrode for various optical devices where good infrared transmission is important. So, it is important to research indium oxide base infrared (3-5 um) transparent conduction thin films.It has been developed that preparation condition influence on properties of thin films. Such as the sputtering time, and pressure, and power, and the substrate temperature, had great influence on the crystal structure, optical and electrical properties of In2O3-based thin films.The In2O3-based thin films obtained were characterized and analyzed by X-ray Diffractometer (XRD), Atomic Force Microscope (AFM), Vander Pauw Method and Fourier Transform Infrared Spectroscopy (FTIR).

scholarly journals Electrically Conductive Thin Films Derived from Bulk Graphite and Liquid-Liquid Interface Assembly

2018 ◽  
Vol 6 (4) ◽  
pp. 1801570 ◽  
Author(s):  
Victoria E. Blair ◽  
Kemal Celebi ◽  
Klaus Müllen ◽  
Jan Vermant
Keyword(s):  
Thin Films ◽  
Liquid Interface ◽  
Electrically Conductive ◽  
Bulk Graphite ◽  
Conductive Thin Films

Functionalizable and electrically conductive thin films formed by oxidative chemical vapor deposition (oCVD) from mixtures of 3-thiopheneethanol (3TE) and ethylene dioxythiophene (EDOT)

2016 ◽  
Vol 4 (16) ◽  
pp. 3403-3414 ◽  
Author(s):  
Hilal Goktas ◽  
Xiaoxue Wang ◽  
Nicolas D. Boscher ◽  
Stephen Torosian ◽  
Karen K. Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optoelectronic Properties ◽  
Deposition Technique ◽  
Electrically Conductive ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Conductive Thin Films

Tuning the optoelectronic properties and the density of hydroxyl pendant groups of 3-thiopheneethanol-co-ethylenedioxythiohene produced via an oxidative chemical vapor deposition technique.

Electrically Conductive Thin Films Prepared from Layer-by-Layer Assembly of Graphite Platelets

2009 ◽  
Vol 19 (7) ◽  
pp. 1118-1129 ◽  
Author(s):  
Mubarak Alazemi ◽  
Indrajit Dutta ◽  
Feng Wang ◽  
Richard H. Blunk ◽  
Anastasios P. Angelopoulos
Keyword(s):  
Thin Films ◽  
Layer By Layer ◽  
Electrically Conductive ◽  
Layer By Layer Assembly ◽  
Conductive Thin Films ◽  
Layer Assembly

Electrically conductive thin films of tetramethyltetraselenafulvalene salts

1989 ◽  
Vol 267 (1-2) ◽  
pp. 303-307 ◽  
Author(s):  
Tohru Maruno ◽  
Shoichi Hayashida ◽  
Ken Sukegawa
Keyword(s):  
Thin Films ◽  
Electrically Conductive ◽  
Conductive Thin Films

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

Carbon Nanotube Based Transparent Conductive Thin Films

2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Conductive Thin Films

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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