Computational mining of photocatalysts for water splitting hydrogen production: two-dimensional InSe-family monolayers

2017 ◽  
Vol 7 (13) ◽  
pp. 2744-2752 ◽  
Author(s):  
Qiong Peng ◽  
Rui Xiong ◽  
Baisheng Sa ◽  
Jian Zhou ◽  
Cuilian Wen ◽  
...  
Keyword(s):  
Binding Energy ◽  
Hydrogen Production ◽  
Visible Light ◽  
Water Splitting ◽  
Visible Light Irradiation ◽  
Electron Mobility ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Optical Responses

The InSe-family monolayers exhibit high electron mobility, small exciton binding energy, and distinguished optical responses under visible-light irradiation.

Semiconductor Photocatalysts for Solar-to-Hydrogen Energy Conversion: Recent Advances of CdS

2020 ◽  
Vol 16 ◽  
Author(s):  
Yuxue Wei ◽  
Honglin Qin ◽  
Jinxin Deng ◽  
Xiaomeng Cheng ◽  
Mengdie Cai ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Visible Light ◽  
Hydrogen Evolution ◽  
Water Splitting ◽  
Visible Light Irradiation ◽  
Noble Metals ◽  
Light Irradiation ◽  
Photocatalytic Hydrogen Evolution ◽  
Theoretical Design ◽  
Recent Developments

Introduction: Solar-driven photocatalytic hydrogen production from water splitting is one of the most promising solutions to satisfy the increasing demands of a rapidly developing society. CdS has emerged as a representative semiconductor photocatalyst due to its suitable band gap and band position. However, the poor stability and rapid charge recombination of CdS restrict its application for hydrogen production. The strategy of using a cocatalyst is typically recognized as an effective approach for improving the activity, stability, and selectivity of photocatalysts. In this review, recent developments in CdS cocatalysts for hydrogen production from water splitting under visible-light irradiation are summarized. In particular, the factors affecting the photocatalytic performance and new cocatalyst design, as well as the general classification of cocatalysts, are discussed, which includes a single cocatalyst containing noble-metal cocatalysts, non-noble metals, metal-complex cocatalysts, metal-free cocatalysts, and multi-cocatalysts. Finally, future opportunities and challenges with respect to the optimization and theoretical design of cocatalysts toward the CdS photocatalytic hydrogen evolution are described. Background: Photocatalytic hydrogen evolution from water splitting using photocatalyst semiconductors is one of the most promising solutions to satisfy the increasing demands of a rapidly developing society. CdS has emerged as a representative semiconductor photocatalyst due to its suitable band gap and band position. However, the poor stability and rapid charge recombination of CdS restrict its application for hydrogen production. The strategy of using a cocatalyst is typically recognized as an effective approach for improving the activity, stability, and selectivity of photocatalysts. Methods: This review summarizes the recent developments in CdS cocatalysts for hydrogen production from water splitting under visible-light irradiation. Results: Recent developments in CdS cocatalysts for hydrogen production from water splitting under visible-light irradiation are summarized. The factors affecting the photocatalytic performance and new cocatalyst design, as well as the general classification of cocatalysts, are discussed, which includes a single cocatalyst containing noble-metal cocatalysts, non-noble metals, metal-complex cocatalysts, metal-free cocatalysts, and multi-cocatalysts. Finally, future opportunities and challenges with respect to the optimization and theoretical design of cocatalysts toward the CdS photocatalytic hydrogen evolution are described. Conclusion: The state-of-the-art CdS for producing hydrogen from photocatalytic water splitting under visible light is discussed. The future opportunities and challenges with respect to the optimization and theoretical design of cocatalysts toward the CdS photocatalytic hydrogen evolution are also described.

Partially planar BP3with high electron mobility as a phosphorene analog

2017 ◽  
Vol 5 (43) ◽  
pp. 11267-11274 ◽  
Author(s):  
Fazel Shojaei ◽  
Hong Seok Kang
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Stacking Pattern ◽  
Very High ◽  
Bilayer Formation

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)

1991 ◽  
Vol 70 (1) ◽  
pp. 529-531 ◽  
Author(s):  
Enrico Zanoni ◽  
Alessandro Paccagnella ◽  
Pietro Pisoni ◽  
Paolo Telaroli ◽  
Carlo Tedesco ◽  
...  
Keyword(s):  
Visible Light ◽  
Electron Mobility ◽  
Impact Ionization ◽  
Light Emission ◽  
High Electron ◽  
High Electron Mobility ◽  
Visible Light Emission

scholarly journals Two dimensional Ni2P/CdS photocatalyst for boosting hydrogen production under visible light irradiation

RSC Advances ◽  
2021 ◽  
Vol 11 (20) ◽  
pp. 12153-12161
Author(s):  
Li Huang ◽  
Ruchao Gao ◽  
Liuying Xiong ◽  
Perumal Devaraji ◽  
Wei Chen ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Light Irradiation ◽  
Two Dimensional ◽  
2D Structure

The mechanism of photogenerated charges separation and hydrogen production of 2D/2D structure Ni2P/CdS.

scholarly journals Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 885 ◽  
Author(s):  
Yan Gu ◽  
Dongmei Chang ◽  
Haiyan Sun ◽  
Jicong Zhao ◽  
Guofeng Yang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Theoretical Study ◽  
Lattice Relaxation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Two Dimensional ◽  
Drift Diffusion ◽  
High Electron Mobility ◽  
Al Content ◽  
Dimensional Electron Gas

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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