A kinetic study of the gas-phase reactions of 1-methylsilacyclobutane in hot wire chemical vapor deposition

2018 ◽  
Vol 20 (1) ◽  
pp. 75-85 ◽  
Author(s):  
Ismail Badran ◽  
Yujun Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Heterogeneous Reactions ◽  
Hot Wire ◽  
Gas Phase Reactions ◽  
Kinetics Of ◽  
Experimental And Theoretical Studies

Experimental and theoretical studies of the reaction kinetics of 1-methylsilacyclobutane in a hot wire chemical vapor deposition process have shown that the heterogeneous reactions on the hot wire surface govern the reaction kinetics.

Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

1989 ◽  
Vol 165 ◽  
Author(s):  
B. Anthony ◽  
T. Hsu ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Inert Carrier ◽  
Substrate Temperatures ◽  
Kinetics Of

AbstractIn this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

scholarly journals Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

2020 ◽  
Vol 54 (10) ◽  
pp. 1129
Author(s):  
А.А. Сушков ◽  
Д.А. Павлов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Р.Н. Крюков ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Energy ◽  
Buffer Layers ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Vapor Deposition Process

Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).

Chemical vapor deposition of cobalt using novel cobalt(I) precursors

2002 ◽  
Vol 17 (2) ◽  
pp. 267-270 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Ho G. Jang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Method ◽  
Gas Phase Reactions ◽  
Reaction Conditions ◽  
Hydride Complexes ◽  
Cobalt Thin Films ◽  
Substrate Temperatures

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

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