Anisotropic carrier mobility in buckled two-dimensional GaN

2017 ◽  
Vol 19 (34) ◽  
pp. 23492-23496 ◽  
Author(s):  
Lijia Tong ◽  
Junjie He ◽  
Min Yang ◽  
Zheng Chen ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Hole Mobility ◽  
Two Dimensional ◽  
P Type

Converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from p-type-like semiconductor (FGaNH) to n-type-like semiconductor (HGaNH).

scholarly journals High hole mobility in physical vapour deposition-grown tellurium-based transistors

2021 ◽  
Vol 8 (8) ◽  
pp. 210554
Author(s):  
Lin Tao ◽  
Lixiang Han ◽  
Qian Yue ◽  
Bin Yao ◽  
Yujue Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Vapour Deposition ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Hole Mobility ◽  
Physical Vapour Deposition ◽  
Metal Dichalcogenides ◽  
P Type

Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complement the conventional semiconductors. Graphene has amazing mobility but suffers from zero bandgap. Subsequently, 2D transition-metal dichalcogenides benefit from their sizable bandgap while the mobility is limited. Recently, the 2D elemental materials such as the representative black phosphorus can combine the high mobility with moderate bandgap; however the air-stability is a challenge. Here, we report air-stable tellurium flakes and wires using the facile and scalable physical vapour deposition (PVD) method. The prototype field-effect transistors were fabricated to exhibit high hole mobility up to 1485 cm 2 V −1 s −1 at room temperature and 3500 cm 2 V −1 s −1 at low temperature (2 K). This work can attract numerous attentions on this new emerging 2D tellurium and open up a new way for exploring high-performance optoelectronics based on the PVD-grown p-type tellurium.

Monolayer SnP3: an excellent p-type thermoelectric material

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19923-19932 ◽  
Author(s):  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Junrong Zhang ◽  
Ping Zhang ◽  
Wu-Xing Zhou ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Thermoelectric Material ◽  
Carrier Mobility ◽  
Optical Absorption Coefficient ◽  
Two Dimensional ◽  
Potential Applications ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields.

scholarly journals Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap

Molecules ◽  
2021 ◽  
Vol 26 (21) ◽  
pp. 6404
Author(s):  
Yukai Zhang ◽  
Xin Qu ◽  
Lihua Yang ◽  
Xin Zhong ◽  
Dandan Wang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Density Functional ◽  
Hole Mobility ◽  
Two Dimensional ◽  
Thermal Stabilities ◽  
2D Semiconductors ◽  
Structure Search ◽  
Direct Band ◽  
High Carrier Mobility ◽  
Bandgap Semiconductors

Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed α-TeB and β-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the β-TeB sheet is up to 6.90 × 102 cm2 V−1 s−1. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.

Auxetic, flexible, and strain-tunable two-dimensional th-AlN for photocatalytic visible light water splitting with anisotropic high carrier mobility

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Water Splitting ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Light Water ◽  
Photocatalytic Water Splitting ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse

2021 ◽  
Author(s):  
Xiang Wang ◽  
Xin Zhou ◽  
Anyang Cui ◽  
Menghan Deng ◽  
Xionghu Xu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
2D Semiconductors ◽  
Artificial Synapse ◽  
P Type

We demonstrate flexo-photoelectronic effects of both n-type and p-type 2D semiconductors.

Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds
Keyword(s):  
Density Of States ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Film Growth ◽  
Hole Mobility ◽  
Transport Parameters ◽  
Microcrystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity ◽  
Transport Measurements

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.

Sign in / Sign up

Export Citation Format

Share Document