scholarly journals Lithiation of multilayer Ni/NiO electrodes: criticality of nickel layer thicknesses on conversion reaction kinetics

2017 ◽  
Vol 19 (30) ◽  
pp. 20029-20039 ◽  
Author(s):  
Guennadi Evmenenko ◽  
Timothy T. Fister ◽  
D. Bruce Buchholz ◽  
Fernando C. Castro ◽  
Qianqian Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Reaction Kinetics ◽  
Layer Thickness ◽  
Morphological Changes ◽  
Nickel Layer ◽  
X Ray ◽  
Transmission Electron ◽  
Buffer Layer Thickness

X-ray reflectivity and transmission electron microscopy (TEM) were used to characterize the morphological changes in thin film electrodes with alternating Ni and NiO layers during lithiation as a function of the Ni buffer layer thickness.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Investigation of Intermetallic Phase Formation and Structural Analysis in Annealed Al/Cu Bilayer Thin Films

2013 ◽  
Vol 845 ◽  
pp. 221-225
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhammad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad Mohamad Ali
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Structural Analysis ◽  
Annealing Temperature ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
X Ray ◽  
Transmission Electron

The growth of intermetallic phases in Al/Cu bilayers thin film having 2/3 layer thickness ratios were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM). In annealing temperature of 200 °C, the growth is controlled by Cu diffusion which resulted to formation of θ-Al2Cu, η-AlCu, ζ-Al3Cu4 and γ-Al4Cu9 phase.

Chemical deterioration of Al film prepared on CF4 plasma-etched LiNbO3 surface

2000 ◽  
Vol 15 (2) ◽  
pp. 476-482 ◽  
Author(s):  
Hirotoshi Nagata ◽  
Yasuyuki Miyama ◽  
Naoki Mitsugi ◽  
Kaori Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Amorphous Phase ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Optical Polarizer ◽  
Al Thin Film

The fabrication process of an Al thin-film optical polarizer on LiNbO3 waveguides after CF4 plasma dry etching of a previously deposited SiO2 buffer layer was investigated. The problem in this process is a precipitation of compounds containing C, O, F, and Li on the etched LiNbO3 surface and a chemical deterioration of the Al caused by a reaction with these precipitates. Most notably, the growth of amorphous phase in addition to the crystalline Al metal grains and a partial oxidization of Al were found at the interface using transmission electron microscopy and x-ray photoelectron spectroscopy.

scholarly journals Synthesis of Nanocomposite (CAU-10-H) Thin-Film Nanocomposite (TFN) Membrane for Removal of Color from the Water

2020 ◽  
pp. 82-90
Author(s):  
Ehsan Kianfar ◽  
H. Mazaheri
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Polymerization ◽  
Water Flux ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron ◽  
Thin Film Nanocomposite

In this study, the synthesized is nanocomposite (CAU-10-H) all samples were characterized by Scanning electron microscope (SEM), Transmission electron microscopy (TEM), X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR). The (nanofiltration (NF)) membranes were constructed by interfacial polymerization of 1, 3, 5-benzenetricarbonyl trichloride and Piperazine using different loading of (CAU-10-H) (0.250, 0.50% wt.). The removal of color from the water by membranes with Solution filtration showed that the membrane containing 0.50% wt. of the nanocomposite (CAU-10-H) had the best. The removal of color from the water flux rejection of the thin-film nanocomposite (TFN) membrane which the removal of color from the water flux was 25.45 L/m2.hr and Tirmethylcyclohexan-1-one rejection was 99.35% at 6 bar.

Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy

1995 ◽  
Vol 39 ◽  
pp. 645-651
Author(s):  
J. Chaudhuri ◽  
R. Thokala ◽  
J. H. Edgar ◽  
B. S. Sywe
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Residual Stress ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Defect Density ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron

Epitaxial AIN thin films grown on sapphire, silicon and silicon carbide substrates were studied using x-ray double crystal diffractometry and transmission electron microscopy to compare the structure, residual stress and defect concentration in these thin films. The AIN thin films was found to have a wurtzite type of structure with a small distortion in lattice parameters which results in a small residual stress of the order of 109 dynes/cm2 in the film. The strain due to lattice parameter mismatch between the substrate and film is too small to account for the residual stress present. The calculated stress from the difference in thermal expansion coefficients between the film and substrate agrees well with the experimental values. Both the x-ray and transmission electron microscopy measurements indicate a low defect density in the AIN thin film grown on 6H-SiC substrate which could be attributed to the small difference in lattice parameters between AIN and 6H-SiC. The defect density in the AIN thin film grown on other substrates were considerably higher. This is the first report of the successful growth of single crystal AIN thin films with such a low concentration of defect density.

Xafs Studies of Cr-Si-O Interfaces with Al and Polyimide by using Synchrotron Radiation

1991 ◽  
Vol 238 ◽  
Author(s):  
Kiyoshi Ogata ◽  
Asao Nakano ◽  
Yasunori Narizuka ◽  
Takayoshi Watanabe ◽  
Tetsuya Yamazaki
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Synchrotron Radiation ◽  
Amorphous Structure ◽  
Structure Change ◽  
Chemical Analyses ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe structure change of a Cr-Si-O thin film with regard to heat-treatment was investigated not only by the transmission XAFS method but by the surface sensitive XAFS method using synchrotron radiation. As a result of transmission XAFS, the Cr-Si-O thin film as sputtered has an amorphous structure like a mixture of SiO2, Cr and CrSix. After heat-treatment to 650 K, Si-Cr bonds decreased and Si-O and Cr-Cr bonds increased. CrSix is unstable in the system. The interfacial studies by the surface XAFS method showed i) at the interface with polyimide, there is a thin layer which is dominantly made of Cr2O3 and ii) at the interface with Al, Cr atoms are mainly coordinated to Cr. Analyses by the XAFS method gave consistent results with chemical analyses by x-ray photoelectron spei roscopy and observation by transmission electron microscopy.

Concentric Metallic-Piezoelectric Microtube Arrays

2008 ◽  
Vol 1071 ◽  
Author(s):  
Hongjin Fan ◽  
S. Kawasaki ◽  
J. M. Gregg ◽  
A. Langner ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Inkjet Printing ◽  
Layer Structure ◽  
Film Structure ◽  
Elemental Mapping ◽  
Porous Si ◽  
X Ray ◽  
Transmission Electron

AbstractTrilayer concentric metallic-piezoelectric-metallic microtubes are fabricated by infiltrating porous Si templates with sol precursors. LaNiO3 (LNO) is used as the inner and outer electrode material and PbZrTiO3 (PZT) is the middle piezoelectric layer. Structure of the microtubes is characterized in details using scanning and transmission electron microscopy which are equipped with energy dispersive X-ray spectroscopy for elemental mapping. The hysteresis of a trilayered thin film structure of LNO-PZT-LNO is shown. This trilayered tubes might find applications in inkjet printing.

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