An efficient route to fabricate fatigue-free P(VDF-TrFE) capacitors with enhanced piezoelectric and ferroelectric properties and excellent thermal stability for sensing and memory applications

2017 ◽  
Vol 19 (11) ◽  
pp. 7743-7750 ◽  
Author(s):  
Deepa Singh ◽  
Deepak Deepak ◽  
Ashish Garg
Keyword(s):  
Thermal Stability ◽  
Fatigue Life ◽  
Ferroelectric Properties ◽  
Piezoelectric Response ◽  
Excellent Thermal Stability ◽  
Ferroelectric Polymer ◽  
Efficient Route ◽  
Application Potential ◽  
Memory Applications

P(VDF-TrFE), the best known ferroelectric polymer, suffers from a rather low piezoelectric response as well as poor electrical fatigue life, hampering its application potential.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals Boosted piezoelectricity with excellent thermal stability in tetragonal NaNbO3-based ceramics

2020 ◽  
Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Temperature Stability ◽  
Lead Free ◽  
Excellent Thermal Stability ◽  
Lead Free Ceramics ◽  
Piezoelectric Performance

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...

scholarly journals A Characterization Study of Morphology and Properties of Poly(3-hydroxybutyrate-co-3-hydroxyhexanoate) (PHBH)/Aloe Vera Fibers Biocomposites: Effect of Fiber Surface Treatments

Proceedings ◽  
2020 ◽  
Vol 69 (1) ◽  
pp. 38
Author(s):  
Celia Idres ◽  
Mustapha Kaci ◽  
Nadjet Dehouche ◽  
Idris Zembouai ◽  
Stéphane Bruzaud
Keyword(s):  
Thermal Stability ◽  
Surface Morphology ◽  
Water Absorption ◽  
Loss Modulus ◽  
Aloe Vera ◽  
Fiber Surface ◽  
Complex Viscosity ◽  
Absorption Capacity ◽  
Characterization Study ◽  
Efficient Route

This paper aims to investigate the effect of different chemical modifications of biocomposites based on poly(3-hydroxybutyrate-co-3-hydroxyhexanoate) (PHBH) and aloe vera bio-fibers incorporated at 20 wt%. The fiber surface was modified with alkaline, organosilanes, and combined alkaline/organosilanes. Surface morphology, thermal stability, water absorption capacity, and rheological behavior of the modified biocomposite materials were studied, and the results compared to both unmodified biocomposites and neat PHBH. The study showed that the modified biocomposites with both alkaline and organosilanes exhibited an improved surface morphology, resulting in a good fiber/matrix interfacial adhesion. As a result, increases in complex viscosity, storage modulus, and loss modulus were observed, whereas water absorption was reduced. Thermal stability remained almost unchanged, with the exception of the biocomposite treated with alkaline, where this property decreased significantly. Finally, the coupling of alkaline and organosilane modification is an efficient route to enhance the properties of PHBH biocomposites.

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

Preparation of polyetheretherketone composites with nanohydroxyapatite rods and carbon nanofibers having high strength, good biocompatibility and excellent thermal stability

RSC Advances ◽  
2016 ◽  
Vol 6 (23) ◽  
pp. 19417-19429 ◽  
Author(s):  
Kai Wang Chan ◽  
Cheng Zhu Liao ◽  
Hoi Man Wong ◽  
Kelvin Wai Kwok Yeung ◽  
Sie Chin Tjong
Keyword(s):  
Thermal Stability ◽  
Carbon Nanofibers ◽  
Hybrid Composite ◽  
High Strength ◽  
Excellent Thermal Stability ◽  
Good Biocompatibility

The WST-1 assay shows that the PEEK/15 vol% nHA–1.9 vol% CNF hybrid composite has excellent biocompatibility.

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

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