Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films

CrystEngComm ◽  
2018 ◽  
Vol 20 (9) ◽  
pp. 1198-1204 ◽  
Author(s):  
Xiaochan Li ◽  
Wenliang Wang ◽  
Yulin Zheng ◽  
Yuan Li ◽  
Liegen Huang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Chemical Etching ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Anisotropic Surface ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching ◽  
Micro Structures

The anisotropic surface etching behavior of nonpolar a-plane GaN (112̄0) epitaxial films, grown by pulsed laser deposition, was investigated experimentally by wet chemical etching.

Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Temperature Measurements ◽  
Laser Deposition ◽  
Metallic Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Deposition and Properties of Epitaxial Ferrite Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Julia M. Phillips ◽  
R. B. Van Dover ◽  
E. M. Gyorgy ◽  
J. H. Marshall
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Saturation Magnetization ◽  
Spinel Structure ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Ferrite Thin Films

ABSTRACTWe have grown thin films and multilayers of several ferrite materials with the spinel structure by pulsed laser deposition of stoichiometric targets. Epitaxial films can be grown on a variety of substrates including MgO, Al2O3, MgAl2O4, Y-stabilized ZrO2 (YSZ) and SrTiO3. Films on Mg- and Al-containing substrates have a low saturation Magnetization, Ms, while films on YSZ and SrTiO3 exhibit bulk values of Ms. The anisotropy can be lowered by a post growth anneal, resulting in a film with a permeability of 28.

Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Wei Chen ◽  
P. Chen ◽  
A. Madhukar ◽  
R. Viswanathan ◽  
J. So
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing ◽  
Scale Thickness ◽  
Ion Beam Implantation ◽  
Etch Stop ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

scholarly journals Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Haiyan Wang ◽  
Lei Wen ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Interfacial Reaction ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition
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