scholarly journals Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Haiyan Wang ◽  
Lei Wen ◽  
...  
1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.


1993 ◽  
Vol 317 ◽  
Author(s):  
Julia M. Phillips ◽  
R. B. Van Dover ◽  
E. M. Gyorgy ◽  
J. H. Marshall

ABSTRACTWe have grown thin films and multilayers of several ferrite materials with the spinel structure by pulsed laser deposition of stoichiometric targets. Epitaxial films can be grown on a variety of substrates including MgO, Al2O3, MgAl2O4, Y-stabilized ZrO2 (YSZ) and SrTiO3. Films on Mg- and Al-containing substrates have a low saturation Magnetization, Ms, while films on YSZ and SrTiO3 exhibit bulk values of Ms. The anisotropy can be lowered by a post growth anneal, resulting in a film with a permeability of 28.


2021 ◽  
Vol 129 (7) ◽  
pp. 337-342
Author(s):  
Keisuke ISHIHAMA ◽  
Masanori KODERA ◽  
Takao SHIMIZU ◽  
Wakiko YAMAOKA ◽  
Risako TSURUMARU ◽  
...  

2016 ◽  
Vol 369 ◽  
pp. 414-421 ◽  
Author(s):  
Haiyan Wang ◽  
Wenliang Wang ◽  
Weijia Yang ◽  
Yunnong Zhu ◽  
Zhiting Lin ◽  
...  

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