Hierarchical architecture of CuInS2 microsphere thin films: altering laterally aligned crystallographic plane growth by Cd and V doping

CrystEngComm ◽  
2017 ◽  
Vol 19 (44) ◽  
pp. 6602-6611 ◽  
Author(s):  
Logu Thirumalaisamy ◽  
Ramesh Raliya ◽  
Shalinee Kavadiya ◽  
Soundarrajan Palanivel ◽  
Kunjithapatham Sethuraman ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallographic Plane ◽  
Hierarchical Architecture ◽  
Copper Indium ◽  
Self Assembled ◽  
Copper Indium Disulphide

Nano-flakes of self-assembled porous pristine and cadmium (Cd) and vanadium (V) doped copper indium disulphide (CuInS2 (CIS)) microspheres are synthesized.

Optical absorbance enhancement by electrochemical surface roughening of CuInS2 thin films

2009 ◽  
Vol 24 (10) ◽  
pp. 3044-3049 ◽  
Author(s):  
Romain Cayzac ◽  
Florence Boulc'h ◽  
Virginie Hornebecq ◽  
Thierry Djenizian ◽  
Marc Bendahan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Etching ◽  
Surface Roughening ◽  
X Ray Diffraction ◽  
Optical Absorbance ◽  
Force Microscopy ◽  
Atomic Force ◽  
Copper Indium ◽  
Cuins2 Thin Films ◽  
Copper Indium Disulphide

This work presents a simple electrochemical etching method to increase the surface roughness of copper indium disulphide (CIS) thin films using low concentration of hydrochloric acid. Film morphologies were investigated using scanning electron microscopy and atomic force microscopy. The structure of films was investigated using x-ray diffraction. A comparative study of optical properties of as-deposited and roughened CIS thin films by transmittance and reflectance experiments show a strong enhancement of absorbance for wavelengths between 600 and 900 nm.

Photochemically deposited and post annealed copper indium disulphide thin films

2014 ◽  
Vol 75 ◽  
pp. 667-679 ◽  
Author(s):  
R. Suriakarthick ◽  
V. Nirmal Kumar ◽  
R. Indirajith ◽  
T.S. Shyju ◽  
R. Gopalakrishnan
Keyword(s):  
Thin Films ◽  
Copper Indium ◽  
Copper Indium Disulphide ◽  
Annealed Copper

Self-assembled Monolayers Preparation and Characterization of BiFeO3 Thin Films

2009 ◽  
Vol 25 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Guo-Qiang TAN ◽  
Hai-Yang BO ◽  
Hong-Yan MIAO ◽  
Ao XIA ◽  
Zhong-Liang HE
Keyword(s):  
Thin Films ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Growth Modulation of Super‐Tetragonal PbTiO 3 Thin Films with Self‐Assembled Nanocolumn Structures

2021 ◽  
pp. 2100547
Author(s):  
Zeyu Zhang ◽  
Yanzhu Dai ◽  
Zhipeng Li ◽  
Lu Lu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Modulation ◽  
Self Assembled

scholarly journals Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 484
Author(s):  
Matthias Schuster ◽  
Dominik Stapf ◽  
Tobias Osterrieder ◽  
Vincent Barthel ◽  
Peter J. Wellmann
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Coarse Grained ◽  
High Porosity ◽  
Low Band Gap ◽  
Seeding Layer ◽  
X Ray ◽  
Face To Face ◽  
Copper Indium ◽  
Vis Spectroscopy

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2−xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 µm and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.

Nanoporous Thin Films Formed from Photocleavable Diblock Copolymers on Gold Substrates Modified with Thiolate Self-Assembled Monolayers

Langmuir ◽  
2020 ◽  
Vol 36 (31) ◽  
pp. 9259-9268 ◽  
Author(s):  
Takashi Ito ◽  
Herman Coceancigh ◽  
Yi Yi ◽  
Jay N. Sharma ◽  
Fred C. Parks ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymers ◽  
Self Assembled Monolayers ◽  
Gold Substrates ◽  
Assembled Monolayers ◽  
Self Assembled
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