Molybdenum and tungsten doped SnO2 transparent conductive thin films with broadband high transmittance between the visible and near-infrared regions

CrystEngComm ◽  
2017 ◽  
Vol 19 (30) ◽  
pp. 4413-4423 ◽  
Author(s):  
Xinxin Huo ◽  
Shenglin Jiang ◽  
Pin Liu ◽  
Meng Shen ◽  
Shiyong Qiu ◽  
...  

We demonstrate an approach for the synthesis of SnO2 transparent conductive films with low square resistance and high transmittance over the visible and NIR regions via doping of molybdenum and tungsten.

1980 ◽  
Vol 7 (1-3) ◽  
pp. 171-179
Author(s):  
J. Griessing

There is a striking dependence of the evaporation deposition geometry (i.e. angular distribution of the incident vapor beam) on the properties of deposited conductive films. This paper discusses solderability, adhesion and long-term stability of adhesion of Ti-Pd-Au, Ti-Au and Ti-Cu films. In all cases the above properties were improved by an evaporation deposition geometry with steep angles of the incident vapor beam.


Author(s):  
Yuri Ogura ◽  
Yuta Arata ◽  
Hiroyuki NISHINAKA ◽  
Masahiro YOSHIMOTO

Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In x Ga1−x )2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In x Ga1−x )2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga1−x )2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.


2020 ◽  
Vol 8 (8) ◽  
pp. 2852-2860 ◽  
Author(s):  
Dong Su ◽  
Muni Yu ◽  
Guangzu Zhang ◽  
Shenglin Jiang ◽  
YanFeng Qin ◽  
...  

Transparent conductive Au–Al bimetallic thin films over a range between ultra-violet and near-infrared regions with excellent thermal stability.


RSC Advances ◽  
2021 ◽  
Vol 11 (24) ◽  
pp. 14730-14736
Author(s):  
Jing Li ◽  
Fengmei Cheng ◽  
Haidong Li ◽  
Hongwen Zhang ◽  
Gang Wang ◽  
...  

Robust and stable AgNWs/Zn2SnO4 hybrid thin films with a sheet resistance of 5–15 ohm sq−1 and transmittance of 85–80% are fabricated.


RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12681-12688 ◽  
Author(s):  
Bing Han ◽  
Jianmin Song ◽  
Junjie Li ◽  
Yajuan Guo ◽  
Binting Dai ◽  
...  

H- and Nb-doped ZnO (HNZO) thin films were fabricated on glass substrates with radio frequency magnetron sputtering.


2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


2009 ◽  
Vol 129 (11) ◽  
pp. 1978-1980
Author(s):  
Kimihiro Ikuta ◽  
Takanori Aoki ◽  
Akio Suzuki ◽  
Tatsuhiko Matsushita ◽  
Masahiro Okuda

Sign in / Sign up

Export Citation Format

Share Document