scholarly journals Ambipolar charge distribution in donor–acceptor polymer field-effect transistors

2017 ◽  
Vol 5 (3) ◽  
pp. 754-762 ◽  
Author(s):  
Xin Yu Chin ◽  
Giuseppina Pace ◽  
Cesare Soci ◽  
Mario Caironi

CMS and CMM studies spatially resolved polaronic and electroabsorption features, and the distribution of charge carriers in an ambipolar organic FET.

2021 ◽  
Vol 03 (02) ◽  
pp. 303-308
Author(s):  
Dror Ben Abba Amiel ◽  
Choongik Kim ◽  
Ori Gidron

Donor–acceptor–donor (DAD) triad systems are commonly applied as active materials in ambipolar organic field-effect transistors, organic solar cells, and NIR-emitting organic light-emitting diodes. Often, these triads utilize oligothiophenes as donors, whereas their oxygen-containing analogs, oligofurans, are far less studied in this setup. Here we introduce a family of DAD triads in which the donors are oligofurans and the acceptor is benzothiadiazole. In a combined computational and experimental study, we show that these triads display optical bandgaps similar to those of their thiophene analogs, and that a bifuran donor is sufficient to produce emission in the NIR spectral region. The presence of a central acceptor unit increases the photostability of oligofuran-based DAD systems compared with parent oligofurans of the similar length.


Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...


2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.


2020 ◽  
Vol 53 (18) ◽  
pp. 7740-7748
Author(s):  
Huai-Hsuan Liu ◽  
Shao-Ling Chang ◽  
Kuo-Hsiu Huang ◽  
Fong-Yi Cao ◽  
Kuang-Yi Cheng ◽  
...  

2020 ◽  
Vol 8 (4) ◽  
pp. 1398-1404
Author(s):  
Guobing Zhang ◽  
Ruikun Chen ◽  
Yue Sun ◽  
Boseok Kang ◽  
Mingxiang Sun ◽  
...  

Two acceptor–donor–acceptor small molecules based on fused ring as donor, and hemi-isoindigo units as acceptors were synthesized and characterized for solution-processed organic field-effect transistors.


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