Angular-Shaped 4,9-Dialkyl α- and β-Naphthodithiophene-Based Donor-Acceptor Copolymers: Investigation of Isomeric Structural Effects on Molecular Properties and Performance of Field-Effect Transistors and Photovoltaics

2015 ◽  
Vol 25 (38) ◽  
pp. 6131-6143 ◽  
Author(s):  
Sheng-Wen Cheng ◽  
De-Yang Chiou ◽  
Che-En Tsai ◽  
Wei-Wei Liang ◽  
Yu-Ying Lai ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Properties ◽  
Structural Effects ◽  
Donor Acceptor ◽  
And Performance

scholarly journals Oligofuran–Benzothiadiazole Co-oligomers: Synthesis, Optoelectronic Properties and Reactivity

2021 ◽  
Vol 03 (02) ◽  
pp. 303-308
Author(s):  
Dror Ben Abba Amiel ◽  
Choongik Kim ◽  
Ori Gidron
Keyword(s):  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Light Emitting Diodes ◽  
Organic Field Effect Transistors ◽  
Active Materials ◽  
Light Emitting ◽  
Organic Light ◽  
Donor Acceptor ◽  
Optical Bandgaps

Donor–acceptor–donor (DAD) triad systems are commonly applied as active materials in ambipolar organic field-effect transistors, organic solar cells, and NIR-emitting organic light-emitting diodes. Often, these triads utilize oligothiophenes as donors, whereas their oxygen-containing analogs, oligofurans, are far less studied in this setup. Here we introduce a family of DAD triads in which the donors are oligofurans and the acceptor is benzothiadiazole. In a combined computational and experimental study, we show that these triads display optical bandgaps similar to those of their thiophene analogs, and that a bifuran donor is sufficient to produce emission in the NIR spectral region. The presence of a central acceptor unit increases the photostability of oligofuran-based DAD systems compared with parent oligofurans of the similar length.

Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

2021 ◽  
Author(s):  
James Weil ◽  
Pankaj B. Shah ◽  
Dmitry A. Ruzmetov ◽  
Mahesh R. Neupane ◽  
Leonard M. De La Cruz ◽  
...  
Keyword(s):  
Vanadium Pentoxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
And Performance

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Two-Dimensional Tetrathienonaphthalenes-Based Donor–Acceptor Copolymers: Synthesis, Isomeric Effect, and Organic Field-Effect Transistors

2020 ◽  
Vol 53 (18) ◽  
pp. 7740-7748
Author(s):  
Huai-Hsuan Liu ◽  
Shao-Ling Chang ◽  
Kuo-Hsiu Huang ◽  
Fong-Yi Cao ◽  
Kuang-Yi Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Organic Field Effect Transistors ◽  
Donor Acceptor ◽  
Isomeric Effect
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