Facile chemical solution synthesis of p-type delafossite Ag-based transparent conducting AgCrO2 films in an open condition

2017 ◽  
Vol 5 (8) ◽  
pp. 1885-1892 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Jie Yang ◽  
Xiaoguang Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Open System ◽  
Wide Bandgap ◽  
Chemical Solution ◽  
Solution Synthesis ◽  
Transparent Conducting ◽  
System P ◽  
P Type

p-Type transparent conducting delafossite AgCrO2 thin films with a wide bandgap (3.41 eV) are synthesized in an open system.

scholarly journals Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnet

2017 ◽  
Vol 1 (7) ◽  
Author(s):  
Irene Lucas ◽  
Pilar Jiménez-Cavero ◽  
J. M. Vila-Fungueiriño ◽  
Cesar Magén ◽  
Soraya Sangiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Yttrium Iron Garnet ◽  
Epitaxial Thin Films ◽  
Chemical Solution ◽  
Solution Synthesis ◽  
Yttrium Iron ◽  
Iron Garnet

Electrical conductivity tuning in p-type transparent conducting AgGaO2 and in quaternary AgInGaO2 thin films

2020 ◽  
Vol 242 ◽  
pp. 122506 ◽  
Author(s):  
Keerthi K ◽  
Hilal Rahman ◽  
Rajani Jacob ◽  
Benoy M. D ◽  
Rachel Reena Philip
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Transparent Conducting ◽  
P Type

Transparent conducting p-type thin films of c-axis self-oriented Bi2Sr2Co2Oy with high figure of merit

2014 ◽  
Vol 50 (68) ◽  
pp. 9697-9699 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Zhenzhen Hui ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Solution Method ◽  
Transparent Conducting ◽  
High Figure ◽  
P Type

Transparent conducting p-type Bi2Sr2Co2Oy thin films show c-axis self-orientation with high figure of merit by a solution method.

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

2014 ◽  
Vol 118 (40) ◽  
pp. 23226-23232 ◽  
Author(s):  
Rajani K Vijayaraghavan ◽  
Anthony P. McCoy ◽  
Lalit Chauhan ◽  
Aidan Cowley ◽  
Richard J. H. Morris ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Plasma ◽  
Growth Structure ◽  
Transparent Conducting ◽  
Structure Morphology ◽  
P Type

CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transparent Conducting ◽  
Potential Applications ◽  
Metal Organic ◽  
Hall Effect Measurements ◽  
Organic Precursors ◽  
P Type

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

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