A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

2017 ◽  
Vol 5 (4) ◽  
pp. 862-871 ◽  
Author(s):  
Ghayas Uddin Siddiqui ◽  
Muhammad Muqeet Rehman ◽  
Young-Jin Yang ◽  
Kyung Hyun Choi
Keyword(s):  
Boron Nitride ◽  
Resistive Switching ◽  
Electronic Device ◽  
Hexagonal Boron Nitride ◽  
Polymer Nanocomposite ◽  
Hybrid Nanocomposites ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Device Applications ◽  
Switching Devices

Organic–inorganic hybrid nanocomposites are an attractive choice for various electronic device applications.

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

2021 ◽  
Author(s):  
Yisen Wang ◽  
Zhifang Huang ◽  
Xinyi Chen ◽  
Miao Lu
Keyword(s):  
Boron Nitride ◽  
Metal Ions ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
High Resistance State ◽  
Two Dimensional ◽  
Horizontal Structure ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Pass Through

Abstract The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025099 ◽  
Author(s):  
Chengbin Pan ◽  
Enrique Miranda ◽  
Marco A Villena ◽  
Na Xiao ◽  
Xu Jing ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
Switching Devices

scholarly journals High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

RSC Advances ◽  
2019 ◽  
Vol 9 (32) ◽  
pp. 18326-18332
Author(s):  
Dongryul Lee ◽  
Sanghyuk Yoo ◽  
Jinho Bae ◽  
Hyunik Park ◽  
Keonwook Kang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Proton Irradiation ◽  
Electronic Device ◽  
Hexagonal Boron Nitride ◽  
High Energy ◽  
Irradiation Damage ◽  
Two Dimensional ◽  
High Energy Proton ◽  
Energy Proton ◽  
Induced Defects

The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance.

Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

2D Materials ◽  
2018 ◽  
Vol 5 (3) ◽  
pp. 031011 ◽  
Author(s):  
Fei Hui ◽  
Marco A Villena ◽  
Wenjing Fang ◽  
Ang-Yu Lu ◽  
Jing Kong ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
Large Area ◽  
Switching Devices

scholarly journals High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Membranes ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 952
Author(s):  
Dewu Yue ◽  
Ximing Rong ◽  
Shun Han ◽  
Peijiang Cao ◽  
Yuxiang Zeng ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Critical Material ◽  
Device Applications ◽  
Uv Visible ◽  
Spectral Ranges ◽  
Very High

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

scholarly journals Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers

Nano Research ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 1357-1364 ◽  
Author(s):  
André Dankert ◽  
M. Venkata Kamalakar ◽  
Abdul Wajid ◽  
R. S. Patel ◽  
Saroj P. Dash
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Tunnel Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document