scholarly journals High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

RSC Advances ◽  
2019 ◽  
Vol 9 (32) ◽  
pp. 18326-18332
Author(s):  
Dongryul Lee ◽  
Sanghyuk Yoo ◽  
Jinho Bae ◽  
Hyunik Park ◽  
Keonwook Kang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Proton Irradiation ◽  
Electronic Device ◽  
Hexagonal Boron Nitride ◽  
High Energy ◽  
Irradiation Damage ◽  
Two Dimensional ◽  
High Energy Proton ◽  
Energy Proton ◽  
Induced Defects

The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance.

Radiation-Induced Defects in Si after High Dose Proton Irradiation

2017 ◽  
Vol 373 ◽  
pp. 209-212 ◽  
Author(s):  
Yurii V. Funtikov ◽  
Leonid Yu. Dubov ◽  
Yurii V. Shtotsky ◽  
Sergey V. Stepanov
Keyword(s):  
Bragg Peak ◽  
Proton Irradiation ◽  
Defect Formation ◽  
High Energy ◽  
High Dose ◽  
Number Density ◽  
High Energy Proton ◽  
Energy Proton ◽  
Radiation Induced ◽  
Induced Defects

Experiments on investigation of the radiation defects produced as a result of high energy proton irradiation of single crystal Si wafers are carried out. Parameters of the proton irradiation facility are presented. It is shown that the most efficient radiation defect formation correlates with the position of the Bragg peak of ionization losses. LT spectra were measured just after irradiation and then after keeping Si samples during 3 months of at room T. We did not observe any variation of the number density of the defects, except for the 7th wafer, where most part of protons was stopped. An efficient annealing of the vacancy-type defects starts at temperatures slightly lower than 100 °C (during 10 min). Annealing at about 700 °C leads to recovering of the monoexponrntial shape of the LT spectra.

scholarly journals Effect of high energy proton irradiation on MAPbI3 films for space applications observed by micro-Raman spectroscopy

2020 ◽  
Vol 1 (6) ◽  
pp. 2068-2073
Author(s):  
Walter O. Herrera Martínez ◽  
Paula Giudici ◽  
Natalia B. Correa Guerrero ◽  
M. Luján Ibarra ◽  
M. Dolores Perez
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Space Applications ◽  
Micro Raman Spectroscopy ◽  
Energy Proton

10 MeV proton irradiation of a MAPbI3 thin film causes PbO formation when the surface is exposed to an O2 atmosphere.

Strongly enhanced flux pinning by high‐energy proton irradiation of a Tl2Ca2Ba2Cu3Oysingle crystal

1990 ◽  
Vol 56 (24) ◽  
pp. 2456-2458 ◽  
Author(s):  
E. L. Venturini ◽  
J. C. Barbour ◽  
D. S. Ginley ◽  
R. J. Baughman ◽  
B. Morosin
Keyword(s):  
Flux Pinning ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton

scholarly journals Potential for neutron and proton transmutation doping of GaN and Ga2O3

2020 ◽  
Vol 1 (1) ◽  
pp. 45-53
Author(s):  
Julie V. Logan ◽  
Elias B. Frantz ◽  
Lilian K. Casias ◽  
Michael P. Short ◽  
Christian P. Morath ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton ◽  
Transmutation Doping ◽  
P Type

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

2017 ◽  
Vol 9 (46) ◽  
pp. 40471-40476 ◽  
Author(s):  
Gwangseok Yang ◽  
Soohwan Jang ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
Jihyun Kim
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Field Effect Transistors ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton
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