Integration of a patterned conductive carbon nanotube thin film with an insulating hydrophobic polymer carpet into robust 2D Janus hybrid flexible electronics

2016 ◽  
Vol 4 (41) ◽  
pp. 9750-9755 ◽  
Author(s):  
Peng Xiao ◽  
Jincui Gu ◽  
Jiang He ◽  
Shuai Wang ◽  
Jiawei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Flexible Electronics ◽  
Electronic Packaging ◽  
Molecular Level ◽  
Hydrophobic Polymer ◽  
Packaging Strategy

Hydrophobic polymer carpet grafting on 2D CNTs thin films provides a simple electronic packaging strategy for flexible conductive networks on a molecular level.

Experimental Study of the High Cycle Fatigue of Thin Film Metal on Polyethylene Terephthalate for Flexible Electronics Applications

2009 ◽  
Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Flexible Electronics ◽  
Electrical Resistance ◽  
Thermal Stresses ◽  
Electronic Systems ◽  
Total Width ◽  
Flexible Substrates ◽  
Polyethylene Naphthalate

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.

Research Progress in the Preparation of Flexible Substrate Barrier Films

2021 ◽  
Vol 1027 ◽  
pp. 91-98
Author(s):  
Li Xia Guan ◽  
Zhao Yi Zhou ◽  
Yi Jing Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Flexible Electronics ◽  
Flexible Substrate ◽  
Research Progress ◽  
Barrier Films ◽  
Main Challenge ◽  
Long Life

The development of flexible electronics towards for the direction of bend ability, lightweight, portability, long life against falling. The performance of the substrate in the flexible electronics plays a very important role in the development of electronics. In this article, three preparation technologies of thin films are introduced, including CVD, PVD and ALD. The paper also introduces the research progress on the preparation of substrate barrier films, and one main challenge that may face by the preparation of thin film materials. In order to satisfy the development of flexible electronics, improving the substrate’s performance constantly is needed. Finally, the development of preparing barrier films is prospected.

Parametric Study of Nanostructure Variations on the Macroscopic Thermal and Electrical Behavior of Neat CNT Thin Film Networks

2011 ◽  
Author(s):  
Nikhil A. Ashtekar ◽  
David A. Jack
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Sensitivity Analysis ◽  
Carbon Nanotube ◽  
Probability Distribution ◽  
Electrical Response ◽  
Electrical Behavior ◽  
Commercial Applications ◽  
Nanotube Chirality

Carbon nanotube thin films are considered by many researchers as a material for the future in many electrical and thermal applications, but a lack of systematic physics-based modeling approaches to quantify the bulk thermal and electrical response due to nanostructure variations makes employing these thin films difficult for commercial applications. In this work we employ the previously presented 3D physics-based computational model for characterizing the bulk thermal and electrical response of a neat carbon nanotube thin film network involving stochastic distributions of length, diameter, chirality, orientation and values of intercontact resistivity obtained from the literature. The model is employed to test the sensitivity of bulk thermal and electrical conductivity on stochastic variations in the nanostructure parameters. We examine the sensitivity of the thin film networks to the experimentally obtained Weibull probability distribution for length and diameter. Additionally, we present a study to quantify the macroscopic conductivity dependence on the nanotube chirality ratio. Through these studies we present an approach that is very generic and can be used for the sensitivity analysis due to variations within the nanostructure.

Surface Effects on the Mechanical Behavior of Buckled Thin Film

2013 ◽  
Vol 80 (2) ◽  
Author(s):  
Yong Wang ◽  
Xue Feng ◽  
Bingwei Lu ◽  
Gangfeng Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Tension ◽  
Mechanical Behavior ◽  
Flexible Electronics ◽  
Geometric Nonlinearity ◽  
Surface Elasticity ◽  
Surface Effects ◽  
Design Strategy ◽  
Piezoelectric Effects

The buckling of thin films with natural nonlinearity can provide a useful tool in many applications. In the present paper, the mechanical properties of controllable buckling of thin films are investigated by accounting for both geometric nonlinearity and surface effects at nanoscale. The effects of surface elasticity and residual surface tension on both static and dynamic behaviors of buckled thin films are discussed based on the surface-layer-based model. The dynamic design strategy for buckled thin films as interconnects in flexible electronics is proposed to avoid resonance in a given noise environment based on the above analysis. Further discussion shows that the thermal and piezoelectric effects on mechanical behavior of buckled thin film are equivalent to that of residual surface tension.

scholarly journals Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 83-88
Author(s):  
Huaping Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Large Scale ◽  
Solution Process ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Schottky Type ◽  
P Type ◽  
Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

scholarly journals Dry shear aligning: a simple and versatile method to smooth and align the surfaces of carbon nanotube thin films

Nanoscale ◽  
2016 ◽  
Vol 8 (6) ◽  
pp. 3232-3236 ◽  
Author(s):  
D. D. Tune ◽  
B. W. Stolz ◽  
M. Pfohl ◽  
B. S. Flavel
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Shear Force ◽  
Film Surface ◽  
Lateral Shear

We show that the application of lateral shear force on a randomly oriented thin film of carbon nanotubes, in the dry state, causes significant reordering of the nanotubes at the film surface.

scholarly journals Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2552
Author(s):  
Xingwei Ding ◽  
Bing Yang ◽  
Haiyang Xu ◽  
Jie Qi ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Room Temperature ◽  
Network Formation ◽  
Semiconductor Films ◽  
Uv Treatment ◽  
Indium Zinc Oxide ◽  
Izo Thin Film

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

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